Silicon Carbide IMW120R090M1H N-Channel 1200V MOSFETs Transistors TO-247-3

Silicon Carbide IMW120R090M1H N-Channel 1200V MOSFETs Transistors TO-247-3​

Product Description Of IMW120R090M1H

IMW120R090M1H is CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET, Very low switching losses.

Specification Of IMW120R090M1H

Features Of IMW120R090M1H

• Threshold-free on state characteristic
• Wide gate-source voltage range
• Benchmark gate threshold voltage, VGS(th) = 4.5V
• 0V turn-off gate voltage for easy and simple gate drive
• Fully controllable dV/dt
• Robust body diode for hard commutation

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FAQ

Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.