241 - 250 of 256
hev silicon carbide power modules
Selling leads
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... the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. ...
2025-07-14 00:19:47
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...400W Through Hole TO-247-3 Product Description Of MSC015SMA070 The MSC015SMA070 silicon carbide (SiC) power MOSFET product line increases the ...
2025-07-14 00:19:57
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... SiC MOSFETs H²PAK-7 Wide Bandgap Transistors Product Description Of SCT040H65G3AG SCT040H65G3AG Automotive-grade silicon carbide Power MOSFET 650 ...
2025-07-14 00:19:44
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... SCTW35N65G2VAG N-Channel Transistors Through Hole Product Description Of SCTW35N65G2VAG SCTW35N65G2VAG is Automotive-grade silicon carbide Power ...
2025-07-14 00:20:06
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Surface Mount SCTH35N65G2V-7 Single N-Channel 650V 45A 208W Transistors Product Description Of SCTH35N65G2V-7 SCTH35N65G2V-7 is Automotive-grade ...
2025-07-14 00:20:06
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...Chip TO-247-2 SiC Schottky Product Description Of MSC030SDA330B MSC030SDA330B The silicon carbide (SiC) power Schottky barrier diode (SBD) , the ...
2025-07-14 00:19:43
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... Mount. The package is D²PAK-2 (TO-263-2). Specification Of FFSB0665B-F085 Part Number: FFSB0665B-F085 Reverse Recovery Time (Trr): 0 Ns Power ...
2025-07-14 00:19:42
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... MSC180SMA120S is a 1200 V, 180 mΩ Silicon Carbide N-Channel Power MOSFET in a TO-268 (D3PAK) package. Specification Of MSC180SMA120S Part Number ...
2025-07-14 00:20:07
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..., Package is TO-247-3L. Specification Of NTHL160N120SC1 Part Number NTHL160N120SC1 Input Capacitance (Ciss) (Max) @ Vds 665 pF @ 800 V Power ...
2025-07-14 00:19:47
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...Silicon Carbide MOSFET Transistors. Specification Of IMZ120R350M1H Part Number IMZ120R350M1H Vgs(th) (Max) @ Id 5.7V @ 1mA Gate Charge (Qg) (Max) @ ...
2025-07-14 00:20:07
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