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ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
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6871 - 6880 of 7805

stm32f407vet6 controller ic chip

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CSD87312Q3E Mosfet Power Transistor MOSFET Dual 30V N-CH NexFET Pwr MOSFETs FEATURES CommonSourceConn ection Ultr a L o w Drain to Drain On-Resistance ... 2024-12-09 22:37:47
CSD25402Q3A Mosfet Power Transistor MOSFET P-CH Pwr MOSFET 1 Features Ultra-Low Qg and Qgd Low Thermal Resistance Low RDS(on) Pb and Halogen Free RoHS ... 2024-12-09 22:37:47
FDMC6679AZ Mosfet Power Transistor MOSFET -30V P-Channel Power Trench Features Max rDS(on) = 10 mΩ at VGS = -10 V, ID = -11.5 A Max r = 18 mΩ at V = ... 2024-12-09 22:37:47
FDPF045N10A Mosfet Power Transistor MOSFET 100V N-Channel PowerTrench MOSFET Features RDS(on)=3.7mΩ(Typ.)@VGS =10V,ID =67A Fast Switching Speed Low ... 2024-12-09 22:37:47
FDMS86181 Mosfet Power Transistor MOSFET 100V/20V N-Chnl Power Trench MOSFET Features Shielded Gate MOSFET Technology MaxrDS(on) =4.2mΩat VGS =10V,ID ... 2024-12-09 22:37:47
CSD87350Q5D Mosfet Power Transistor MOSFET Synch Buck NexFET Power Block 1 Features Half-Bridge Power Block 90% system Efficiency at 25 A Up to 40-A ... 2024-12-09 22:37:47
FDV301N Mosfet Power Transistor MOSFET N-Ch Digital Features 25 V, 0.22 A continuous, 0.5 A Peak. RDS(ON) =5Ω@VGS=2.7V RDS(ON) = 4 Ω @ VGS= 4.5 V. ... 2024-12-09 22:37:47
FDMS3662 Mosfet Power Transistor MOSFET 100V N-Channel PowerTrench Features Max rDS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A Advanced Package and Silicon ... 2024-12-09 22:37:47
FDMS6681Z Mosfet Power Transistor MOSFET -30V P-Channel PowerTrench Features Max rDS(on) = 3.2 mΩ at VGS = -10 V, ID = -21.1 A MaxrDS(on) =5.0mΩatVGS ... 2024-12-09 22:37:47
FDS6681Z Mosfet Power Transistor MOSFET 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is produced using ... 2024-12-09 22:37:47
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