CSD25402Q3A 650 MV Power Mosfet Driver Circuit , High Power Mosfet Transistors

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

CSD25402Q3A 650 MV Power Mosfet Driver Circuit , High Power Mosfet Transistors

Brand Name	Ti
Model Number	CSD25402Q3A
Minimum Order Quantity	Contact us
Price	Contact us
Payment Terms	Paypal, Western Union, TT
Supply Ability	50000 Pieces per Day
Delivery Time	The goods will be shipped within 3 days once received fund
Packaging Details	VDFN8
Description	MOSFET P-CH 20V 76A 8VSON
Channel Mode	Enhancement
Configuration	Single
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 125 C
Vgs th - Gate-Source Threshold Voltag	650 mV
Rds On - Drain-Source Resistance	8.9 mOhms

Detailed Product Description

CSD25402Q3A Mosfet Power Transistor MOSFET P-CH Pwr MOSFET

1 Features

Ultra-Low Qg and Qgd
Low Thermal Resistance
Low RDS(on)
Pb and Halogen Free
RoHS Compliant
SON 3.3 mm × 3.3 mm Plastic Package

2 Applications

DC-DC Converters
Battery Management
Load Switch
Battery Protection

3 Description

This –20-V, 7.7-mΩ NexFETTM power MOSFET is designed to minimize losses in power conversion load management applications with a SON 3.3 mm × 3.3 mm package that offers an excellent thermal performance for the size of the device.

Product Summary

TA = 25°C		TYPICAL VALUE		UNIT
VDS	Drain-to-source voltage	–20		V
Qg	Gate charge total (–4.5 V)	7.5		nC
Qgd	Gate charge gate to drain	1.1		nC
RDS(on)	Drain-to-source on resistance	VGS = –1.8 V	74	mΩ
		VGS = –2.5 V	13.3	mΩ
		VGS = –4.5 V	7.7	mΩ
Vth	Threshold voltage	–0.9		V

Ordering Information(1)

DEVICE	QTY	MEDIA	PACKAGE	SHIP
CSD25402Q3A	2500	13-Inch Reel	SON 3.3 mm × 3.3 mm Plastic Package	Tape and Reel
CSD25402Q3AT	250	7-Inch Reel	SON 3.3 mm × 3.3 mm Plastic Package	Tape and Reel

Absolute Maximum Ratings

TA = 25°C		VALUE	UNIT
VDS	Drain-to-source voltage	–20	V
VGS	Gate-to-source voltage	+12 or –12	V
ID	Continuous drain current, TC = 25°C	–76	A
	Continuous drain current (package limit)	–35	A
	Continuous drain current(1)	–15	A
IDM	Pulsed drain current(2)	–148	A
PD	Power dissipation(1)	2.8	W
PD	Power dissipation, TC = 25°C	69	W
TJ	Operating junction temperature	–55 to 150	°C
Tstg	Storage temperature	–55 to 150	°C

Product Tags: p channel mosfet driver circuit mosfet motor control circuit

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