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CSD25402Q3A 650 MV Power Mosfet Driver Circuit , High Power Mosfet Transistors

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
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CSD25402Q3A 650 MV Power Mosfet Driver Circuit , High Power Mosfet Transistors

Brand Name Ti
Model Number CSD25402Q3A
Minimum Order Quantity Contact us
Price Contact us
Payment Terms Paypal, Western Union, TT
Supply Ability 50000 Pieces per Day
Delivery Time The goods will be shipped within 3 days once received fund
Packaging Details VDFN8
Description MOSFET P-CH 20V 76A 8VSON
Channel Mode Enhancement
Configuration Single
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 125 C
Vgs th - Gate-Source Threshold Voltag 650 mV
Rds On - Drain-Source Resistance 8.9 mOhms
Detailed Product Description

CSD25402Q3A Mosfet Power Transistor MOSFET P-CH Pwr MOSFET


1 Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance

  • Low RDS(on)

  • Pb and Halogen Free

  • RoHS Compliant

  • SON 3.3 mm × 3.3 mm Plastic Package

     

2 Applications

  • DC-DC Converters

  • Battery Management

  • Load Switch

  • Battery Protection

     

3 Description

This –20-V, 7.7-mΩ NexFETTM power MOSFET is designed to minimize losses in power conversion load management applications with a SON 3.3 mm × 3.3 mm package that offers an excellent thermal performance for the size of the device.

 

Product Summary

TA = 25°C

TYPICAL VALUE

UNIT

VDS

Drain-to-source voltage

–20

V

Qg

Gate charge total (–4.5 V)

7.5

nC

Qgd

Gate charge gate to drain

1.1

nC

RDS(on)

Drain-to-source on resistance

VGS = –1.8 V

74

VGS = –2.5 V

13.3

VGS = –4.5 V

7.7

Vth

Threshold voltage

–0.9

 

Ordering Information(1)

DEVICE

QTY

MEDIA

PACKAGE

SHIP

CSD25402Q3A

2500

13-Inch Reel

SON 3.3 mm × 3.3 mm Plastic Package

Tape and Reel

CSD25402Q3AT

250

7-Inch Reel

 

Absolute Maximum Ratings

TA = 25°C

VALUE

UNIT

VDS

Drain-to-source voltage

–20

V

VGS

Gate-to-source voltage

+12 or –12

V

ID

Continuous drain current, TC = 25°C

–76

A

Continuous drain current (package limit)

–35

A

Continuous drain current(1)

–15

A

IDM

Pulsed drain current(2)

–148

A

PD

Power dissipation(1)

2.8

W

Power dissipation, TC = 25°C

69

TJ

Operating junction temperature

–55 to 150

°C

Tstg

Storage temperature

–55 to 150

°C

Product Tags: p channel mosfet driver circuit   mosfet motor control circuit  
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