China Flash Memory IC Chip manufacturer
ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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stm32f030f4p6 electronic ic

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
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5711 - 5720 of 6117

stm32f030f4p6 electronic ic

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SOT-23 BIPOLAR TRANSISTORS TRANSISTOR (NPN) FEATURES For general AF applications High collector current High current gain Low collector-emitter ... 2024-12-09 22:41:27
A1302KUA Power Mosfet Transistor Continuous Time Ratiometric Linear Hall Effect Sensors Features and Benefits ►Low-noise output ►Fast power-on time ... 2024-12-09 22:41:27
N - Channel 600 V 2.0 Ohm rf high Power Mosfet Transistor NDD04N60ZT4G Features • Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100... 2024-12-09 22:41:27
MMBT4401LT1G Switching Power Mosfet Transistor high power 225 mW PD High Voltage Transistors NPN Silicon ORDERING INFORMATION Device Order Number ... 2024-12-09 22:41:27
MMBT4403LT1G Switching high power mosfet transistors , PNP silicon power transistors High Voltage Transistors NPN Silicon ORDERING INFORMATION Device ... 2024-12-09 22:41:27
MMBTA43LT1G high voltage power mosfet transistors , rf power mosfet transistors High Voltage Transistors NPN Silicon ORDERING INFORMATION Device Order ... 2024-12-09 22:41:27
P-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = -30V ID = -7 A (VGS = -10V) RDS(ON) < 34mΩ (VGS = -10V) RDS(ON) < 54mΩ (VGS = -4... 2024-12-09 22:41:27
MJD112T4G high power mosfet transistors , Complementary DarliCM GROUPon Power Transistors MJD112 (NPN) MJD117 (PNP) Complementary DarliCM GROUPon ... 2024-12-09 22:41:27
Silicon Controlled Rectifiers Features ■ Sensitive gate trigger current: IGT=200uA maximum ■ Low on-state voltage: VTM=1.2(typ.)@ ITM ■ Low reverse ... 2024-12-09 22:41:27
BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are ... 2024-12-09 22:41:27
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