MMBT4403LT1G Switching high power mosfet transistors , PNP silicon power transistors

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

Brand Name	ONSEMI
Model Number	MMBT4403LT1G
Certification	Original Factory Pack
Place of Origin	Original
Minimum Order Quantity	5pcs
Price	Negotiation
Payment Terms	T/T, Western Union,PayPal
Supply Ability	290PCS
Delivery Time	1 Day
Packaging Details	please contact me for details
Description	Bipolar (BJT) Transistor PNP 40 V 600 mA 200MHz 300 mW Surface Mount SOT-23-3 (TO-236)
VCEO	−40 Vdc
VCBO	−40 Vdc
VEBO	−5.0 Vdc
IC	−600 mAdc
PD	225 mW

Detailed Product Description

High Voltage Transistors

ORDERING INFORMATION

Features

• Pb−Free Package is Available

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.

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Product Tags: power mosfet ic multi emitter transistor

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