MMBT4403LT1G Switching high power mosfet transistors , PNP silicon power transistors
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Detailed Product Description
MMBT4403LT1G Switching high power mosfet transistors , PNP silicon power transistorsHigh Voltage TransistorsNPN SiliconORDERING INFORMATION
Features • Pb−Free Package is Available
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.
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Product Tags: power mosfet ic multi emitter transistor |
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