MJD112T4G high power mosfet transistors , Complementary DarliCM GROUPon Power Transistors
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MJD112T4G high power mosfet transistors , Complementary DarliCM GROUPon Power Transistors
MJD112 (NPN) MJD117 (PNP) Complementary DarliCM GROUPon Power Transistors
DPAK For Surface Mount Applications
SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS
Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.
Features • Pb−Free Packages are Available • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−1” Suffix) • Lead Formed Version in 16 mm Tape and Reel (“T4” and “RL” Suffix) • Electrically Similar to Popular TIP31 and TIP32 Series
MAXIMUM RATINGS
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
MARKING DIAGRAMS
PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O
DPAK−3 CASE 369D−01 ISSUE B
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| Product Tags: power mosfet ic silicon power transistors |
