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MJD112T4G high power mosfet transistors , Complementary DarliCM GROUPon Power Transistors

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
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MJD112T4G high power mosfet transistors , Complementary DarliCM GROUPon Power Transistors

Model Number MJD112T4G
Certification new & original
Place of Origin original factory
Minimum Order Quantity 10pcs
Price Negotiate
Payment Terms T/T, Western Union, Paypal
Supply Ability 8600pcs
Delivery Time 1 day
Packaging Details Please contact me for details
Description Bipolar (BJT) Transistor NPN - DarliCM GROUPon 100 V 2 A 25MHz 20 W Surface Mount DPAK
Collector−Emitter Voltage 100 Vdc
Collector−Base Voltage 100 Vdc
Emitter−Base Voltage 5 Vdc
Base Current 50 mAdc
Total Power Dissipation @ TC = 25°C 20 W
Operating and Storage Junction Temperature Range −65 to +150 °C
Detailed Product Description

 

MJD112T4G high power mosfet transistors , Complementary DarliCM GROUPon Power Transistors

 

MJD112 (NPN)

MJD117 (PNP)

Complementary DarliCM GROUPon Power Transistors

 

DPAK For Surface Mount Applications

 

SILICON POWER TRANSISTORS

2 AMPERES

100 VOLTS

20 WATTS

 

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.

 

Features

• Pb−Free Packages are Available

• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

• Straight Lead Version in Plastic Sleeves (“−1” Suffix)

• Lead Formed Version in 16 mm Tape and Reel (“T4” and “RL” Suffix)

• Electrically Similar to Popular TIP31 and TIP32 Series

 

MAXIMUM RATINGS

RatingSymbolMaxUnit
Collector−Emitter VoltageVCEO100Vdc
Collector−Base VoltageVCB100Vdc
Emitter−Base VoltageVEB5Vdc

Collector Current − Continuous

                               Peak

IC

2

4

Adc
Base CurrentIB50mAdc

Total Power Dissipation @ TC = 25°C

         Derate above 25°C

PD

20

0.16

W

W/°C

Total Power Dissipation* @ TA = 25°C

         Derate above 25°C

PD

1.75

0.014

W

W/°C

Operating and Storage Junction Temperature RangeTJ, Tstg−65 to +150°C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

 

MARKING DIAGRAMS

 

 

PACKAGE DIMENSIONS

DPAK

CASE 369C

ISSUE O

 

 

DPAK−3

CASE 369D−01

ISSUE B

 

 

 

 

 

 

Product Tags: power mosfet ic   silicon power transistors  
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