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CHONGMING GROUP (HK) INT'L CO., LTD.
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MMBT4401LT1G Switching Power Mosfet Transistor high power 225 mW PD

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

MMBT4401LT1G Switching Power Mosfet Transistor high power 225 mW PD

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Brand Name ONSEMI
Model Number MMBT4401LT1G
Certification Original Factory Pack
Place of Origin Original
Minimum Order Quantity 5pcs
Price Negotiation
Payment Terms T/T, Western Union,PayPal
Supply Ability 290PCS
Delivery Time 1 Day
Packaging Details please contact me for details
Description Bipolar (BJT) Transistor NPN 40 V 600 mA 250MHz 300 mW Surface Mount SOT-23-3 (TO-236)
VCEO 40 Vdc
VCBO 60 Vdc
VEBO 6.0 Vdc
IC 600 mAdc
PD 225 mW
Detailed Product Description

 

MMBT4401LT1G Switching Power Mosfet Transistor high power 225 mW PD

High Voltage Transistors

NPN Silicon

ORDERING INFORMATION

Device OrderNumber Package Type Shipping†
MMBT4401LT1 

SOT−23

(Pb−Free)

3,000 / Tape & Reel
MMBT4401LT1G

(Pb−Free)

3,000 / Tape & Reel
MMBT4401LT3

SOT−23

(Pb−Free)

10,000 / Tape & Reel

 

Features

• Pb−Free Package is Available

 

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.  

 

SWITCHING TIME EQUIVALENT TEST CIRCUITS

 

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Product Tags: power mosfet ic   silicon power transistors  
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