MMBT4401LT1G Switching Power Mosfet Transistor high power 225 mW PD
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Detailed Product Description
MMBT4401LT1G Switching Power Mosfet Transistor high power 225 mW PDHigh Voltage TransistorsNPN SiliconORDERING INFORMATION
Features • Pb−Free Package is Available
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
STOCK LIST
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Product Tags: power mosfet ic silicon power transistors |
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