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ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
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silicon power transistors

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...Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of ... 2024-12-09 22:41:39
MMBT4401LT1G Switching Power Mosfet Transistor high power 225 mW PD High Voltage Transistors NPN Silicon ORDERING INFORMATION Device Order Number ... 2024-12-09 22:41:27
2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type Power Amplifier Applications FEATURES • High transition frequency: fT = 200 MHz (typ.) • ... 2024-12-09 22:37:47
Silicon PNP Epitaxial Planar Transistor , 2SB1560 audio power mosfet DESCRIPTION ·With TO-3PN package ·Complement to type 2SD2390 APPLICATIONS ·Audio ... 2024-12-09 22:38:38
KBPC5010 50.0A Power Mosfet Transistor Single Phase Silicon Bridge Rectifier digital ic circuits Features ♦This series is UL listed under the ... 2024-12-09 22:41:27
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC2229 Black and White TV Video Output Applications High-Voltage Switching ... 2024-12-09 22:41:27
2N6052 PNP DARLICM GROUPON POWER SILICON TRANSISTOR schottky barrier rectifiers diode sr360 . . . designed for general−purpose amplifier and low ... 2024-12-09 22:41:27
... from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, ... 2024-12-09 22:38:51
...Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling ... 2024-12-09 22:38:51
... HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, ... 2024-12-09 22:38:51
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