161 - 170 of 1104
silicon power transistors
Selling leads
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...transistors) EMD3 / UMD3N / IMD3A Features 1) Both the DTA114E chip and DTC114E chip in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 ...
2024-12-09 22:38:51
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BFG135 NPN 7GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier ...
2024-12-09 22:41:27
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..., tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are ...
2024-12-09 22:38:38
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... New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per ...
2024-12-09 22:41:27
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...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power ...
2024-12-09 22:37:47
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...Transistor • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC (max)=625mW • Refer to KSP2907 for graphs PNP Epitaxial Silicon ...
2024-12-09 22:37:59
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TIP120/121/122 Medium Power Linear Switching Applications • Complementary to TIP125/126/127 NPN Epitaxial DarliCM GROUPon Transistor Absolute Maximum ...
2024-12-09 22:41:27
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...Transistor • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC (max)=625mW • Refer to KSP2907 for graphs PNP Epitaxial Silicon ...
2024-12-09 22:41:27
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...GENERAL PURPOSE SWITCHING TRANSISTOR Voltage -150Volts Power 300mWatts MECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, ...
2024-12-09 22:37:32
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... Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced ...
2024-12-09 22:41:27
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