591 - 600 of 689
qfn temperature sensor chip
Selling leads
|
DR73-100-R High Power Density, High Efficiency, Shielded Inductors Description 125°C maximum total operating temperature Four sizes of shielded drum ...
2026-01-05 15:51:23
|
|
MAX4518CSD Precision, 4-Channel/Dual 2-Channel, Low-Voltage, CMOS Analog Multiplexers General Description The MAX4518/MAX4519 precision, monolithic, ...
2026-01-05 15:51:23
|
|
IRFP150N Transistor Electronics Components electronic devices N-Channel Power MOSFET Features • Ultra Low On-Resistance - rDS(ON) = 0.030Ω, VGS = 10V ...
2026-01-05 15:51:23
|
|
A1101, A1102, A1103, A1104, and A1106 Continuous-Time Switch Family Features and Benefits ▪ Continuous-time operation ▫ Fast power-on time ▫ Low noise ...
2026-01-05 15:51:23
|
|
• Advanced Process • Technology Ultra Low On-Resistance • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated ...
2026-01-05 15:51:23
|
|
Silicon NPN Power Transistors BD909 BD911 DESCRIPTION · ·With TO-220C package ·Complement to type BD910 BD912 APPLICATIONS · Intented for use in power ...
2026-01-05 15:51:23
|
|
FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: ...
2026-01-05 15:51:23
|
|
Features • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • 150o C Junction Temperature • Through ...
2026-01-05 15:51:23
|
|
SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS BCX56 DESCRIPTION Collector-Base Voltage:100V Collector-Emitter Voltage:80V Emitter-Base Voltage:5V ...
2026-01-05 15:51:23
|
|
HUF75645P3, HUF75645S3S 75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs Features • Ultra Low On-Resistance - rDS(ON) = 0.014Ω, VGS = 10V • ...
2026-01-05 15:51:23
|