IRFP150N Transistor Electronics Components electronic devices N-Channel Power MOSFET

IRFP150N Transistor Electronics Components electronic devices

N-Channel Power MOSFET

Features

• Ultra Low On-Resistance - rDS(ON) = 0.030Ω, VGS = 10V

• Simulation Models

- Temperature Compensated PSPICE™ and SABER© Electrical Models

- Spice and SABER© Thermal Impedance Models

- www.fairchildsemi.com

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . .  . . . . . . . . VDSS 100 V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . VDGR 100 V

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . VGS ±20 V

Drain Current Continuous (TC= 25oC, VGS = 10V) (Figure 2) . . .. . . . . . . . . . . . . ID

Continuous (TC= 100oC, VGS = 10V) (Figure 2) . . . . . . . . . . . . ID

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . .  . . . . . .IDM 44 31

Figure 4 A A Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . .UIS

Figures 6, 14, 15 Power Dissipation . . . . . . . . . .  . . . . . . . . . . . PD

Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . 155 1.03 W W/oC

Operating and Storage Temperature . . . . .  . . . . TJ, TSTG -55 to 175 oC

Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. ... . .TL

Package Body for 10s, See Techbrief TB334 . . . . . . . . . Tpkg 300 260 oC oC