FGA25N120ANTDTU Power Mosfet Transistor New & Original 1200V NPT Trench IGBT

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

FGA25N120ANTDTU Power Mosfet Transistor New & Original 1200V NPT Trench IGBT

Model Number	FGA25N120ANTD
Certification	new & origianl
Place of Origin	original factory
Minimum Order Quantity	10 pcs
Price	Negotiate
Payment Terms	T/T, Western Union, Paypal
Supply Ability	4800pcs
Delivery Time	1 day
Packaging Details	Please contact me for details
Description	IGBT NPT and Trench 1200 V 50 A 312 W Through Hole TO-3P
Collector-Emitter Voltage	1200 V
Gate-Emitter Voltage	± 20 V
Pulsed Collector Current	90 A
Diode Maximum Forward Current	150 A
Operating Junction Temperature	-55 to +150 °C
Storage Temperature Range	-55 to +150 °C

Detailed Product Description

FGA25N120ANTD/FGA25N120ANTD_F109

1200V NPT Trench IGBT

Features

• NPT Trench Technology, Positive temperature coefficient

• Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C

• Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25°C

• Extremely enhanced avalanche capability

Description

Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.

Absolute Maximum Ratings

Symbol	Description	FGA25N120ANTD	Units
V_CES	Collector-Emitter Voltage	1200	V
V_GES	Gate-Emitter Voltage	± 20	V
I_C	Collector Current @ TC = 25°C	50	A
I_C	Collector Current @ TC = 100°C	25	A
I_CM	Pulsed Collector Current (Note 1)	90	A
I_F	Diode Continuous Forward Current @ TC = 100°C	25	A
I_FM	Diode Maximum Forward Current	150	A
P_D	Maximum Power Dissipation @ TC = 25°C	312	W
P_D	Maximum Power Dissipation @ TC = 100°C	125	W
T_J	Operating Junction Temperature	-55 to +150	°C
T_stg	Storage Temperature Range	-55 to +150	°C
T_L	Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds	300	°C

Mechanical Dimensions

TO-3PN

Product Tags: npn smd transistor multi emitter transistor

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