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ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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p channel mosfet transistor

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

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Ms.Doris Guo
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p channel mosfet transistor

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SOT-23 Plastic-Encapsulate Transistors FEATURES ► Complementary to S9013 ► Excellent hFE linearity MARKING: 2T1 MAXIMUM RATINGS (TA=25 unless ... 2024-12-09 22:41:27
PNP GENERAL PURPOSE TRANSISTORS FEATURES General Purpose Amplifier Applications NPN Epitaxial Silicon, Planar Design Collector Current IC = -100mA ... 2024-12-09 22:41:27
Silicon NPN Power Transistors TIP31/31A/31B/31C DESCRIPTION · ·With TO-220C package ·Complement to type TIP32/32A/32B/32C APPLICATIONS ·Medium power ... 2024-12-09 22:41:39
STGIPS20K60 Mosfet Power Module Transistor Chip IC Electronics Rectifier Diode China Supplier Features ■ 17 A, 600 V 3-phase IGBT inverter bridge ... 2024-12-09 22:43:31
CSD17308Q3 CSD17308Q3T Mosfet Power Transistor MOSFET 30V NCh NexFET Pwr MOSFET 1 Features Optimized for 5-V Gate Drive Ultra-Low Qg and Qgd Low ... 2024-12-09 22:37:47
IRLL110, SiHLL110 Power MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) VGS = 5.0 V 0.54 Qg (Max.) (nC) 6.1 Qgs (nC) 2.6 Qgd (nC) 3.3 Configuration ... 2024-12-09 22:38:51
IRF2907ZS-7PPbF HEXFET® Power MOSFET Features • Advanced Process Technology • Ultra Low On-Resistance • 175°C Operating Temperature • Fast Switching • ... 2024-12-09 22:38:51
...Output transistor safe area protection ► Internal short circuit current limit ► Available in the aluminum TO-3 package Voltage Range LM7805C 5V ...... 2024-12-09 22:41:27
... high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers ... 2024-12-09 22:37:47
HUF75645P3, HUF75645S3S 75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs Features • Ultra Low On-Resistance - rDS(ON) = 0.014Ω, VGS = 10V • ... 2024-12-09 22:38:51
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