STGIPS20K60 Mosfet Power Module Transistor Chip IC Electronics Rectifier Diode China Supplier

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

STGIPS20K60 Mosfet Power Module Transistor Chip IC Electronics Rectifier Diode China Supplier

Brand Name	SANYO
Model Number	STGIPS20K60
Certification	Original Factory Pack
Place of Origin	China
Minimum Order Quantity	25pcs
Price	Negotiation
Payment Terms	T/T, Western Union,PayPal
Supply Ability	28000PCS
Delivery Time	1 Day
Packaging Details	DIP-16
Description	Power Driver Module IGBT 3 Phase 600 V 17 A 25-PowerDIP Module (0.993", 25.23mm)
Temperature Range	–55°C to +150°C
Payment Term	T/T, Paypal, Western Union
Voltage	10V
Current	5A
Package	SDIP-25
Factory Package	TUBE

Detailed Product Description

STGIPS20K60 Mosfet Power Module Transistor Chip IC Electronics Rectifier Diode China Supplier

Features
■ 17 A, 600 V 3-phase IGBT inverter bridge including control ICs for gate driving and freewheeling diodes ■ 3.3 V, 5 V, 15 V CMOS/TTL inputs comparators with hysteresis and pull down / pull up resistors
■ Internal bootstrap diode
■ Interlocking function
■ VCE(sat) negative temperature coefficient
■ Short-circuit rugged IGBTs
■ Undervoltage lockout
■ Smart shutdown function
■ Comparator for fault protection against over temperature and overcurrent
■ DBC fully isolated package
■ Isolation rating of 2500 Vrms/min

Applications
■ 3-phase inverters for motor drives
■ Home appliances, such as washing machines, refrigerators, air conditioners

Description
The STGIPS20K60 intelligent power module provides a compact, high performance AC motor drive for a simple and rugged design. It mainly targets low power inverters for applications such as home appliances and air conditioners. It combines ST proprietary control ICs with the most advanced short circuit rugged IGBT system

ABSOLUTE MAXIMUM RATINGS(1)

VPN Supply voltage applied between P - NU, NV, NW 450 V

VPN(surge) Supply voltage (surge) applied between P - NU, NV, NW 500 V VCES Collector emitter voltage (VIN(1) = 0)

3. Pulse width limited by max junction temperature

Each IGBT pulsed collector current 40 A

PTOT Each IGBT total dissipation at TC = 25°C

42 W tscw Short circuit withstand time,

VCE = 0.5 V(BR)CES TJ = 125 °C, VCC = Vboot= 15 V, VIN (1)= 0 ÷ 5 V 5 µs

TRANS BC847BLT1	18000	ON	CHINA
RC0805JR-0710KL	35000	YAGEO	CHINA
RC0805JR-071KL	20000	YAGEO	CHINA
DIODO DF06S	3000	SEP	CHINA
CAP 0805 330NF 100V C2012X7S2A334K125AB	20000	TDK	JAPAN
DIODO US1A-13-F	50000	DIODES	MALAYSIA
INDUTOR. 100UH SLF7045T-101MR50-PF	10000	TDK	JAPAN
RES 470R 5% RC0805JR-07470RL	500000	YAGEO	CHINA
RES 1206 2M 1% RC1206FR-072ML	500000	YAGEO	CHINA
DIODO P6KE180A	10000	VISHAY	MALAYSIA
RES 1206 470R 5% RC1206JR-07470RL	500000	YAGEO	CHINA
DIODO UF4007 AMMO	500000	MIC	CHINA
TRANS. ZXMN10A09KTC	20000	ZETEX	TAIWAN
RES 0805 4K7 5% RC0805JR-074K7L	500000	YAGEO	CHINA
ACOPLADOR OTICO. MOC3021S-TA1	10000	LITE-ON	TAIWAN
TRANS MMBT2907A-7-F	30000	DIODES	MALAYSIA
TRANS STGW20NC60VD	1000	ST	MALAYSIA
C.I LM2576HVT-ADJ/NOPB	500	TI	THAILAND
C.I MC33298DW	1000	MOT	MALAYSIA
C.I MC908MR16CFUE	840	FREESCAL	MALAYSIA
C.I P8255A5	4500	INTEL	JAPAN
C.I HM6116P-2	5000	HITACHI	JAPAN
C.I DS1230Y- 150	2400	DALLAS	PHILIPPINES
TRANS. ZXMN10A09KTC	18000	ZETEX	TAIWAN
TRIAC BT151-500R	500000		MOROCCO
C.I HCNR200-000E	1000	AVAGO	TAIWAN
TRIAC TIC116M	10000	TI	THAILAND
DIODO US1M-E3/61T	18000	VISHAY	MALAYSIA
DIODO ES1D-E3-61T	18000	VISHAY	MALAYSIA
C.I MC908MR16CFUE	840	FREESCAL	TAIWAN
C.I CD40106BE	250	TI	THAILAND
ACOPLADOR PC733H	1000	SHARP	JAPAN
TRANS NDT452AP	5200	FSC	MALAYSIA
CI LP2951-50DR	1200	TI	THAILAND
CI MC7809CD2TR4G	1200	ON	MALAYSIA
DIODO MBR20200CTG	22000	ON	MALAYSIA
FUSIVEL 30R300UU	10000	LITTELFUSEI	TAIWAN
C.I TPIC6595N	10000	TI	THAILAND
EPM7064STC44-10N	100	ALTERA	MALAYSIA
DIODO 1N4004-T	5000000	MIC	CHINA
C.I CD4060BM	500	TI	THAILAND
ACOPLADOR MOC3020M	500	FSC	MALAYSIA
DIODO W08	500	SEP	CHINA
C.I SN74HC373N	1000	TI	PHILIPPINES
PHOTOSENSOR 2SS52M	500	honeywell	JAPAN
C.I SN74HC02N	1000	TI	THAILAND
C.I CD4585BE	250	TI	THAILAND
C.I MT46H32M16LFBF-6IT:C	40	MICRON	MALAYSIA
DIODO MMSZ5242BT1G	30000	ON	MALAYSIA

Package Dimensions
unit:mm 2120

Product Tags: thyristor diode module low voltage power mosfet

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STGIPS20K60 Mosfet Power Module Transistor Chip IC Electronics Rectifier Diode China Supplier

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