281 - 290 of 435
p channel mosfet transistor
Selling leads
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... extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power ...
2024-12-09 22:37:47
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Transistor IRLR7843TRPBF TO-252 30V 161A Power MOSFET for Telecom and Industrial Use IRLR7843PbF IRLU7843PbF Description Power MOSFET Selection for ...
2024-12-09 22:37:47
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... l Fast Switching l Fully Avalanche Rated Key Specifications: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced ...
2024-12-09 22:38:38
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N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free available • Ultra-Low On-Resistance Using High Density TrenchFET® Gen II Power MOSFET Technology ...
2024-12-09 22:41:27
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... in planar technology with “base island” layout and monolithic DarliCM GROUPon configuration. The resulting transistors show exceptional high gain ...
2024-12-09 22:37:47
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Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General ...
2024-12-09 22:38:38
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Plastic DarliCM GROUPon complementary power mosfet , Silicon Power Transistors 2N6038 Plastic DarliCM GROUPon complementary silicon power transistors ...
2024-12-09 22:38:38
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... • Logic level compatible ID = -0.3 A • Subminiature surface mount package RDS(ON) ≤ 2.5 Ω (VGS = -10 V) GENERAL DESCRIPTION PINNING SOT23 P...
2024-12-09 22:48:58
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...Mosfet 12A / 200V P-Channel Original FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel • Isolated Central Mounting Hole • ...
2024-12-09 22:48:58
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– Pulsed FDN304PZ P-Channel 1.8V Specified PowerTrench MOSFET switching power mosfet Features · ► –2.4 A, –20 V. RDS(ON) = 52 mW @ VGS = –4.5 V RDS(ON...
2024-12-09 22:38:51
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