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FDN304PZ P-Channel 1.8V Specified Power Trench MOSFET Switching Power Mosfet

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

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Ms.Doris Guo
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FDN304PZ P-Channel 1.8V Specified Power Trench MOSFET Switching Power Mosfet

Brand Name FAIRCHILD
Model Number FDN304PZ
Certification Original Factory Pack
Place of Origin Original
Minimum Order Quantity 50pcs
Price negotiation
Payment Terms T/T, Western Union,PayPal
Supply Ability 5200PCS
Delivery Time 1 day
Packaging Details please contact me for details
Description P-Channel 20 V 2.4A (Ta) 500mW (Ta) Surface Mount SOT-23-3
Drain-Source Voltage –20 V
Gate-Source Voltage ±8 V
Operating and Storage Junction Temperature Range –55 to +150 °C
ID –2.4 A
Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W
Detailed Product Description

– Pulsed FDN304PZ P-Channel 1.8V Specified PowerTrench MOSFET switching power mosfet

 

Features ·

► –2.4 A, –20 V. RDS(ON) = 52 mW @ VGS = –4.5 V RDS(ON) = 70 mW @ VGS = –2.5 V RDS(ON) = 100 mW @ VGS = –1.8 V

► Fast switching speed

► ESD protection diode

► High performance trench technology for extremely low RDS(ON)

► SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint

 

Applications

►Battery management

►Load switch

► Battery protection

 

General Description

This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.

 

Absolute Maximum Ratings

Symbol Parameter Ratings Units
VDSSDrain-Source Voltage–20V
VGSSGate-Source Voltage±8V
ID

Drain Current

 – Continuous

– Pulsed
 

 

–2.4

-10


 

A
TJ, TSTGOperating and Storage Junction Temperature Range –55 to +150°C

 

 

 

 

 

 

 

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Product Tags: multi emitter transistor   silicon power transistors  
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