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ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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n channel mos field effect transistor

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

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Ms.Doris Guo
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n channel mos field effect transistor

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FDS9435A Power Mosfet Transistor Single P - Channel Field Effect Transistor General Description This P-Channel MOSFET is a rugged gate version of ... 2024-12-09 22:41:27
...Field Effect Transistor General Description The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. ... 2024-12-09 22:38:51
AO3400A N-Channel Enhancement Mode Field Effect Transistor General Description The AO3400A uses advanced trench technology to provide excellent RDS(ON... 2024-12-09 22:41:27
2N7002DW-7-F DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage ... 2024-12-09 22:38:51
2N7002A-7 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input ... 2024-12-09 22:42:04
AON7403 P-Channel Enhancement Mode Field Effect Transistor General Description The AON7403/L uses advanced trench technology to provide excellent RDS... 2024-12-09 22:38:51
P-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = -30V ID = -7 A (VGS = -10V) RDS(ON) < 34mΩ (VGS = -10V) RDS(ON) < 54mΩ (VGS = -4... 2024-12-09 22:41:27
AO3400A N-Channel Enhancement Mode Field Effect Transistor General Description The AO3400A uses advanced trench technology to provide excellent RDS(ON... 2024-12-09 22:41:39
TPC8111 Field Effect Transistor Silicon P Channel MOS Type HEXFET Power MOSFET Lithium Ion Battery Applications Notebook PC Applications Portable ... 2024-12-09 22:38:51
... • Logic level compatible ID = -0.3 A • Subminiature surface mount package RDS(ON) ≤ 2.5 Ω (VGS = -10 V) GENERAL DESCRIPTION PINNING SOT23 P... 2024-12-09 22:48:58
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