China Flash Memory IC Chip manufacturer
ChongMing Group (HK) Int'l Co., Ltd
CHONGMING GROUP (HK) INT'L CO., LTD.
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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo
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ddr3l memory ics

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2N7002LT1G Mosfet Power Transistor MOSFET 60V 115mA N-Channel Features • 2V Prefix for Automotive and Other Applications Requiring Unique Site and ... 2024-12-09 22:37:47
CSD18534Q5A Mosfet Power Transistor MOSFET 60V N-Ch NexFET Pwr MOSFET 1 Features Ultra-Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic ... 2024-12-09 22:37:47
CSD87312Q3E Mosfet Power Transistor MOSFET Dual 30V N-CH NexFET Pwr MOSFETs FEATURES CommonSourceConn ection Ultr a L o w Drain to Drain On-Resistance ... 2024-12-09 22:37:47
CSD25402Q3A Mosfet Power Transistor MOSFET P-CH Pwr MOSFET 1 Features Ultra-Low Qg and Qgd Low Thermal Resistance Low RDS(on) Pb and Halogen Free RoHS ... 2024-12-09 22:37:47
CSD18540Q5B Mosfet Power Transistor MOSFET 60V, N-channel NexFET Pwr MOSFET 1 Features Ultra-Low Qg and Qgd Low-Thermal Resistance Avalanche Rated ... 2024-12-09 22:37:47
FDMC6679AZ Mosfet Power Transistor MOSFET -30V P-Channel Power Trench Features Max rDS(on) = 10 mΩ at VGS = -10 V, ID = -11.5 A Max r = 18 mΩ at V = ... 2024-12-09 22:37:47
FDC3535 Mosfet Power Transistor MOSFET MOSFET; -80V P-Chan PowerTrench Features MaxrDS(on) =183mΩatVGS =-10V,ID =-2.1A MaxrDS(on) =233mΩatVGS =-4.5V... 2024-12-09 22:37:47
FDPF045N10A Mosfet Power Transistor MOSFET 100V N-Channel PowerTrench MOSFET Features RDS(on)=3.7mΩ(Typ.)@VGS =10V,ID =67A Fast Switching Speed Low ... 2024-12-09 22:37:47
FDMS86181 Mosfet Power Transistor MOSFET 100V/20V N-Chnl Power Trench MOSFET Features Shielded Gate MOSFET Technology MaxrDS(on) =4.2mΩat VGS =10V,ID ... 2024-12-09 22:37:47
CSD87350Q5D Mosfet Power Transistor MOSFET Synch Buck NexFET Power Block 1 Features Half-Bridge Power Block 90% system Efficiency at 25 A Up to 40-A ... 2024-12-09 22:37:47
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