2N7002LT1G N Channel Mosfet Transistor , 115mA Mos Field Effect Transistor

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

Contact Person:
Ms.Doris Guo View Contact Details

2N7002LT1G N Channel Mosfet Transistor , 115mA Mos Field Effect Transistor

Brand Name	TI
Model Number	2N7002LT1G
Minimum Order Quantity	Contact us
Price	Contact us
Payment Terms	Paypal, Western Union, TT
Supply Ability	50000 Pieces per Day
Delivery Time	The goods will be shipped within 3 days once received fund
Packaging Details	SOT23-3
Description	N-Channel 60 V 115mA (Tc) 225mW (Ta) Surface Mount SOT-23-3 (TO-236)
Product Type	MOSFET
Subcategory	MOSFETs
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Rds On - Drain-Source Resistance	7.5 Ohms
Vgs th - Gate-Source Threshold Voltage	1 V

Detailed Product Description

2N7002LT1G Mosfet Power Transistor MOSFET 60V 115mA N-Channel

Features

• 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable (2V7002L)

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

MAXIMUM RATINGS

Rating	Symbol	Value	Unit
Drain−Source Voltage	VDSS	60	Vdc
Drain−Gate Voltage (RGS = 1.0 MW)	VDGR	60	Vdc
Drain Current − Continuous TC = 25°C (Note 1) − Continuous TC = 100°C (Note 1) − Pulsed (Note 2)	ID ID IDM	± 115 ± 75 ± 800	mAdc
Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms)	VGS VGSM	± 20 ± 40	Vdc Vpk

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit
Total Device Dissipation FR−5 Board (Note 3) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient	PD RqJA	225 1.8 556	mW mW/°C °C/W
Total Device Dissipation (Note 4) Alumina Substrate, TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient	PD RqJA	300 2.4 417	mW mW/°C °C/W
Junction and Storage Temperature	TJ, Tstg	− 55 to +150	°C

Product Tags: p channel mosfet driver circuit mosfet motor control circuit

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