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2N7002LT1G N Channel Mosfet Transistor , 115mA Mos Field Effect Transistor

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ChongMing Group (HK) Int'l Co., Ltd

City: shenzhen

Country/Region:china

Tel:86-755-88367702

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Ms.Doris Guo
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2N7002LT1G N Channel Mosfet Transistor , 115mA Mos Field Effect Transistor

Brand Name TI
Model Number 2N7002LT1G
Minimum Order Quantity Contact us
Price Contact us
Payment Terms Paypal, Western Union, TT
Supply Ability 50000 Pieces per Day
Delivery Time The goods will be shipped within 3 days once received fund
Packaging Details SOT23-3
Description N-Channel 60 V 115mA (Tc) 225mW (Ta) Surface Mount SOT-23-3 (TO-236)
Product Type MOSFET
Subcategory MOSFETs
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Rds On - Drain-Source Resistance 7.5 Ohms
Vgs th - Gate-Source Threshold Voltage 1 V
Detailed Product Description

2N7002LT1G Mosfet Power Transistor MOSFET 60V 115mA N-Channel

 

Features

• 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable (2V7002L)

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

 

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain−Source Voltage

VDSS

60

Vdc

Drain−Gate Voltage (RGS = 1.0 MW)

VDGR

60

Vdc

Drain Current
− Continuous TC = 25°C (Note 1) − Continuous TC = 100°C (Note 1) − Pulsed (Note 2)

ID

ID IDM

± 115 ± 75 ± 800

mAdc

Gate−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 50 ms)

VGS VGSM

± 20 ± 40

Vdc Vpk 

 

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR−5 Board (Note 3) TA = 25°C
Derate above 25°C

Thermal Resistance, Junction−to−Ambient

PD RqJA

225 1.8 556

mW mW/°C °C/W

Total Device Dissipation
(Note 4) Alumina Substrate, TA = 25°C Derate above 25°C

Thermal Resistance, Junction−to−Ambient

PD RqJA

300 2.4 417

mW mW/°C °C/W

Junction and Storage Temperature

TJ, Tstg

− 55 to +150

°C

Product Tags: p channel mosfet driver circuit   mosfet motor control circuit  
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