CSD18540Q5B RF Power Mosfet Transistors , N Channel Mosfet Circuit NexFET Pwr MOSFET

TA = 25°C

TYPICAL VALUE

UNIT

VDS

Drain-to-Source Voltage

60

V

Qg

Gate Charge Total (10 V)

41

nC

Qgd

Gate Charge Gate-to-Drain

6.7

nC

RDS(on)

Drain-to-Source On Resistance

VGS = 4.5 V

2.6

mΩ

VGS =10V

1.8

VGS(th)

Threshold Voltage

1.9

V

DEVICE

QTY

MEDIA

PACKAGE

SHIP

CSD18540Q5B

2500

13-Inch Reel

SON 5.00-mm × 6.00-mm Plastic Package

Tape and Reel

CSD18540Q5BT

250

7-Inch Reel

TA = 25°C

VALUE

UNIT

VDS

Drain-to-Source Voltage

60

V

VGS

Gate-to-Source Voltage

±20

V

ID

Continuous Drain Current (Package Limited)

100

A

Continuous Drain Current (Silicon Limited), TC = 25°C

205

Continuous Drain Current(1)

29

IDM

Pulsed Drain Current, TA = 25°C(2)

400

A

PD

Power Dissipation(1)

3.8

W

Power Dissipation, TC = 25°C

188

TJ, Tstg

Operating Junction, Storage Temperature

–55 to 175

°C

EAS

Avalanche Energy, Single Pulse ID =80A,L=0.1mH,RG =25Ω

320

mJ