China Integrated Circuit IC Chip manufacturer
Shenzhen Koben Electronics Co., Ltd.
Shenzhen Koben Electronics Co., Ltd.
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high power mosfet transistors

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Shenzhen Koben Electronics Co., Ltd.

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:86-755-23816068

Contact Person:
Mr.Zhu
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high power mosfet transistors

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... Avalanche Rated Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to ... 2024-12-09 12:31:15
... Avalanche Rated Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to ... 2024-12-09 18:59:29
...transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector ... 2024-12-09 18:59:29
MRFE6VP5300NR1 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 27dB 300W TO-270 WB-4 High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ... 2024-12-09 18:59:29
...MOSFET Applications l High frequency DC-DC converters l TO-220 is available in PbF as Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce ... 2024-12-09 12:29:15
...MOSFET Applications l High frequency DC-DC converters l TO-220 is available in PbF as Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce ... 2024-12-09 18:59:29
...Mosfet LDMOS (Dual), Common Source 50V 40mA 108MHz 28dB 1400W SOT539A 1. 1 General description A 1400 W extremely rugged LDMOS power transistor for ... 2024-12-09 12:12:55
...Mosfet LDMOS (Dual), Common Source 50V 40mA 108MHz 28dB 1400W SOT539A 1. 1 General description A 1400 W extremely rugged LDMOS power transistor for ... 2024-12-09 18:59:29
MRF6V2150NBR1 RF Power Transistors N-Channel Enhancement-Mode Lateral MOSFETs Features • Characterized with Series Equivalent Large--Signal Impedance ... 2024-12-09 18:59:29
IRFP260NPBF N-Channel MOSFET 200V 50A 300W Through Hole TO-247AC RoHS Compliant Other Name:64-6005PBF Feature l Advanced Process Technology l Dynamic ... 2024-12-09 12:29:15
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