China Integrated Circuit IC Chip manufacturer
Shenzhen Koben Electronics Co., Ltd.
Shenzhen Koben Electronics Co., Ltd.
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high power mosfet transistors

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Shenzhen Koben Electronics Co., Ltd.

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:86-755-23816068

Contact Person:
Mr.Zhu
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high power mosfet transistors

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... low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED ... 2024-12-09 12:33:54
... low RDS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED ... 2024-12-09 18:59:29
...Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Transistor Type PNP Current - Collector ... 2024-12-09 18:59:14
2SC1971 C1971 TO220 NPN epitaxial planar type transistor designed for RF power amplifiers Description: silicon NPN epitaxial planar type transistor ... 2024-12-09 12:31:15
2SC1971 C1971 TO220 NPN epitaxial planar type transistor designed for RF power amplifiers Description: silicon NPN epitaxial planar type transistor ... 2024-12-09 18:59:14
SI4435DY P-Channel 30V 8.8A 2.5W Surface Mount Power management MOSFET 4435 MSL level 1 Datasheet Applications: · Power management · Load switch · ... 2024-12-09 12:29:15
SI4435DY P-Channel 30V 8.8A 2.5W Surface Mount Power management MOSFET 4435 MSL level 1 Datasheet Applications: · Power management · Load switch · ... 2024-12-09 18:59:14
...MOSFET 600V 7A (Tc) 70W (Tc) Surface Mount DPAK FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - ... 2024-12-09 12:35:29
...MOSFET 150V 2.7A (Ta) 1.5W (Ta) Surface Mount FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - ... 2024-12-09 18:59:14
...) Vgs 19nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) Vds 350pF @ 25V FET Feature - Power Dissipation (Max) 38W (Tc) 2024-12-09 18:59:14
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