China Integrated Circuit IC Chip manufacturer
Shenzhen Koben Electronics Co., Ltd.
Shenzhen Koben Electronics Co., Ltd.
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high power mosfet transistors

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Shenzhen Koben Electronics Co., Ltd.

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:86-755-23816068

Contact Person:
Mr.Zhu
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high power mosfet transistors

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LY2-0-24VDC general purpose Miniature Power Relay 24V ■ Equipped with arc barrier. ■ Dielectric strength: 2,000 V. ■ Built-in diode models added to ... 2024-12-09 18:59:29
GWPSLR31.EM High power LED-White DURIS S 5 List Of Other Electronic Components In Stock CD4066BPWR TI PM73123-PGI PMC XC3S1500-4FGG456I XILINX ... 2024-12-09 17:18:52
High power factor isolation active PFC LED constant current driver chip PT4209ESOH List Of Other Electronic Components In Stock STB30N10S ... 2024-12-09 17:18:52
High power factor isolation active PFC LED constant current driver chip PT4209ESOH List Of Other Electronic Components In Stock STB30N10S ... 2024-12-09 18:59:14
...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG... 2024-12-09 12:12:55
...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG... 2024-12-09 18:59:29
... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power ... 2024-12-09 12:12:55
... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power ... 2024-12-09 18:59:29
...MOSFET TRANSISTOR TO-247AC IRFP4227PBF Features Advanced Process Technology Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass ... 2024-12-09 18:59:29
... in the 806 to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate ... 2024-12-09 12:12:55
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