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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

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Province/State:guangdong

Country/Region:china

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power switch transistor

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AlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate Drive

60V N-Channel AlphaSGT HXY4266 Product Summary VDS 60V ID (at VGS=10V) 11A RDS(ON) (at VGS=10V) < 13.5mΩ RDS(ON) (at VGS=4.5V) < 18mΩ General ... 2024-12-09 18:42:28

HXY4406A VDS 30V Mos Field Effect Transistor ID 13A RDS(ON) < 11.5mΩ

60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V ID (at VGS=10V) 13A RDS(ON) (at VGS=10V) < 11.5mΩ RDS(ON) (at VGS = 4.5V) < 15.5mΩ General ... 2024-12-09 18:42:28

HXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low Noise

60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V I = 10A VGS = 10V) RDS(ON) < 23mΩ (VGS = 10V) RDS(ON) < 35mΩ (VGS = 4.5V) General Description ... 2024-12-09 18:42:28

50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃

50N06P/T 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate ... 2024-12-09 18:42:28

60N06HX 60V Mos Field Effect Transistor N Channel Enhancement Mode MOSFET

60N06HX 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge ... 2024-12-09 18:42:28

AlphaSGT HXY4266 Mos Field Effect Transistor 60v Logic Level Gate Drive

60V N-Channel AlphaSGT HXY4266 Product Summary VDS 60V ID (at VGS=10V) 11A RDS(ON) (at VGS=10V) < 13.5mΩ RDS(ON) (at VGS=4.5V) < 18mΩ General ... 2024-12-09 21:52:33

HXY4406A VDS 30V Mos Field Effect Transistor ID 13A RDS(ON) < 11.5mΩ

60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V ID (at VGS=10V) 13A RDS(ON) (at VGS=10V) < 11.5mΩ RDS(ON) (at VGS = 4.5V) < 15.5mΩ General ... 2024-12-09 21:52:33

HXY4466 30V Mos Field Effect Transistor N Channel VGS 10V Low Noise

60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V I = 10A VGS = 10V) RDS(ON) < 23mΩ (VGS = 10V) RDS(ON) < 35mΩ (VGS = 4.5V) General Description ... 2024-12-09 21:52:33

50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃

50N06P/T 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate ... 2024-12-09 21:52:33

60N06HX 60V Mos Field Effect Transistor N Channel Enhancement Mode MOSFET

60N06HX 200V N-Channel Enhancement Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge ... 2024-12-09 21:52:33

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