381 - 390 of 422
power switch transistor
Selling leads
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...Transistors TIP112 DARLINGTON TRANSISTOR (NPN) FEATURE High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation ...
2024-12-09 18:42:28
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...Transistors TIP112 DARLINGTON TRANSISTOR (NPN) FEATURE High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation ...
2024-12-09 21:52:33
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...Switching Diode FEATURES Low forward voltage Fast reverse recovery time Solid dot = Green molding compound device,if none,the normal device. ...
2024-12-09 18:42:28
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...Switching Diode FEATURES Low forward voltage Fast reverse recovery time Solid dot = Green molding compound device,if none,the normal device. ...
2024-12-09 21:52:33
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HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscompleme...
2024-12-09 18:42:28
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HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscompleme...
2024-12-09 21:52:33
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HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscompleme...
2024-12-09 18:42:28
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QM4803D N-Ch and P-Channel MOSFET Description The WSF6012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , ...
2024-12-09 18:42:28
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AOD423/AOI423/AOY423 30V P-Channel MOSFET General Description The AOD423/AOI423/AOY423 uses advanced trench technology to provide excellent R DS(ON) , ...
2024-12-09 19:03:13
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HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscompleme...
2024-12-09 21:52:33
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