China Mosfet Power Transistor manufacturer
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Shenzhen Hua Xuan Yang Electronics Co.,Ltd Our electronic components semiconductor is your most correct choice, because we are professional, honest, high quality, low price
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logic mosfet switch

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee
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logic mosfet switch

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...MOSFET Description The 20G04GD uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as ... 2024-12-09 18:42:28
AOD424G 20V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low R DS(ON) • RoHS and Halogen-Free Compliant Application • DC/DC ... 2024-12-09 19:03:13
...MOSFET Description The 20G04GD uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as ... 2024-12-09 21:52:33
AOD424G 20V N-Channel MOSFET General Description • Trench Power MOSFET technology • Low R DS(ON) • RoHS and Halogen-Free Compliant Application • DC/DC ... 2024-12-09 21:52:33
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect ... 2024-12-09 18:50:53
..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect ... 2024-12-09 21:52:33
...MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m ... 2024-12-09 18:42:28
...Mosfet Driver Using Transistor , Durable High Amp Transistor Mosfet Driver Using Transistor Description: The AP6H03Suses advanced trench technology ... 2024-12-09 19:11:03
...Mosfet Power Transistor For Motor Control 30A 100V TO-220 Mosfet Power Transistor Description: The AP30N10P uses advanced trench technology to ... 2024-12-09 19:11:03
...MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m ... 2024-12-09 21:52:33
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