Shenzhen Hua Xuan Yang Electronics Co.,Ltd: Shenzhen Hua Xuan Yang Electronics Co.,Ltd Our electronic components semiconductor is your most correct choice, because we are professional, honest, high quality, low price

Home > Products > Mosfet Power Transistor >

AP6H03S Mosfet Driver Using Transistor , Durable High Amp Transistor

Browse Categories

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee View Contact Details

AP6H03S Mosfet Driver Using Transistor , Durable High Amp Transistor

Brand Name	Hua Xuan Yang
Model Number	AP6H03S
Certification	RoHS、SGS
Place of Origin	ShenZhen China
Minimum Order Quantity	Negotiation
Price	Negotiated
Payment Terms	L/C T/T Western Union
Supply Ability	18,000,000PCS / Per Day
Delivery Time	1 - 2 Weeks
Packaging Details	Boxed
Product name	Mosfet Driver Using Transistor
Model	AP6H03S
Pack	SOP-8
Marking	AP6H03S YYWWWW
VDSDrain-Source Voltage	30V
VGSGate-Sou rce Voltage	±20A

Detailed Product Description

AP6H03S Mosfet Driver Using Transistor , Durable High Amp Transistor

Mosfet Driver Using Transistor Description:

The AP6H03Suses advanced trench
technology to provide excellent RDS(ON) and low gate charge .
The complementary MOSFETs may be used to form a
level shifted high side switch, and for a host of other
applications

Mosfet Driver Using Transistor Features

N-Channel
VDS = 30V,ID =7.5A
RDS(ON) < 16mΩ@ VGS=10V
NChannel
VDS = 30V,ID =7.5A
RDS(ON) < 16mΩ@ VGS=10V
High power and current handing capability
Lead free product is acquired
Surface mount package

Mosfet Driver Using Transistor Application

● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply

Package Marking and Ordering Information

Product ID	Pack	Marking	Qty(PCS)
AP6H03S	SOP-8	AP6H03S YYWWWW	3000

Absolute Maximum Ratings Tc=25℃ unless otherwise noted

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	30	V
VGS	Gate-Sou rce Voltage	±20	V
D I	Drain Current – Continuous (TC=25℃)	7.5	A
D I	Drain Current – Continuous (TC=100℃)	4.8	A
IDM	Drain Current – Pulsed1	30	A
EAS	Single Pulse Avalanche Energy 2	14	mJ
IAS	Single Pulse Avalanched Current 2	17	A
PD	Power Dissipation (TC=25℃)	2.1	W
PD	Power Dissipation – Derate above 25℃	0.017	W/℃
TSTG	Storage Temperature Range	-55 to 150	℃
TJ	Operating Junction Temperature Range	-55 to 150	℃

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	30	V
VGS	Gate-Sou rce Voltage	±20	V
D I	Drain Current – Continuous (TC=25℃)	7.5	A
D I	Drain Current – Continuous (TC=100℃)	4.8	A
IDM	Drain Current – Pulsed1	30	A
EAS	Single Pulse Avalanche Energy 2	14	mJ
IAS	Single Pulse Avalanched Current 2	17	A
PD	Power Dissipation (TC=25℃)	2.1	W
PD	Power Dissipation – Derate above 25℃	0.017	W/℃
TSTG	Storage Temperature Range	-55 to 150	℃
TJ	Operating Junction Temperature Range	-55 to 150	℃

Thermal Characteristics

Symbol	Parameter	Typ.	Max.	Unit
RθJA	Thermal Resistance Junction to ambient	---	60	℃/W

Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Off Characteristics

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	30	---	---	V
△ BVDSS/△ TJ	BVDSS Temperature Coefficient	Reference to 25℃•, ID=1mA	---	0.04	---	V/℃
IDSS	Drain-Source Leakage Current	VDS=30V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=24V , VGS=0V , TJ=125℃	---	---	10	uA
IGSS	Gate-Source Leakage Current	VGS=± 20V , VDS=0V	---	---	± 100	nA

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	30	---	---	V
△ BVDSS/△ TJ	BVDSS Temperature Coefficient	Reference to 25℃•, ID=1mA	---	0.04	---	V/℃
IDSS	Drain-Source Leakage Current	VDS=30V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=24V , VGS=0V , TJ=125℃	---	---	10	uA
IGSS	Gate-Source Leakage Current	VGS=± 20V , VDS=0V	---	---	± 100	nA

RDS(ON)	Static Drain-Source On-Resistance	VGS=10V , ID=6A	---	15	20	mΩ
RDS(ON)	Static Drain-Source On-Resistance	VGS=4.5V , ID=3A	---	23	30	mΩ
VGS(th)	Gate Threshold Voltage	VGS=VDS , I =250uA	1.2	1.5	2.5	V
△VGS(th)	VGS(th) Temperature Coefficient	VGS=VDS , I =250uA	---	-4	---	mV/℃
gfs	Forward Transconductance	VDS=10V , I D=6A	---	13	---	S

Qg	Total Gate Charge3 , 4		---	4.1	8
Qgs	Gate-Source Charge 3 , 4		---	1	2
Qgd	Gate-Drain Charge		---	2.1	4
Td(on)	Turn-On Delay Time 3 , 4		---	2.6	5
Tr	Rise Time		---	7.2	14
Td(off)	Turn-Off Delay Time 3 , 4		---	15.8	30
Tf	Fall Time 3 , 4		---	4.6	9
Ciss	Input Capacitance		---	345	500
Coss	Output Capacitance		---	55	80
Crss	Reverse Transfer Capacitance		---	32	55
Rg	Gate resistance	VGS=0V, VDS=0V, f=1MHz	---	3.2	6.4	Ω

IS	Continuous Source Current	VG=VD=0V , Force Current	---	---	7.5	A
ISM	Pulsed Source Current	VG=VD=0V , Force Current	---	---	30	A
VSD	Diode Forward Voltage3	VGS=0V , IS=1A , TJ=25℃	---	---	1	V
rr t	Reverse Recovery Time	VGS=0V,IS=1A , di/dt=100A/µs	---	---	---	ns
Qrr	Reverse Recovery Charge	VGS=0V,IS=1A , di/dt=100A/µs	---	---	---	nC

IS	Continuous Source Current	VG=VD=0V , Force Current	---	---	7.5	A
ISM	Pulsed Source Current	VG=VD=0V , Force Current	---	---	30	A
VSD	Diode Forward Voltage3	VGS=0V , IS=1A , TJ=25℃	---	---	1	V
rr t	Reverse Recovery Time	VGS=0V,IS=1A , di/dt=100A/µs	---	---	---	ns
Qrr	Reverse Recovery Charge	VGS=0V,IS=1A , di/dt=100A/µs	---	---	---	nC

Reflow Soldering

The choice of heating method may be influenced by plastic QFP package). If infrared or vapor phase heating is used and the package is not absolutely dry (less than 0.1% moisture content by weight), vaporization of the small amount of moisture in them can cause cracking of the plastic body. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 °C.

Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stenciling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method.

Typical reflow peak temperatures range from 215 to 270 °C depending on solder paste material. The top-surface

temperature of the packages should preferable be kept below 245 °C for thick/large packages (packages with a thickness

2.5 mm or with a volume 350 mm so called thick/large packages). The top-surface temperature of the packages should preferable be kept below 260 °C for thin/small packages (packages with a thickness < 2.5 mm and a volume < 350 mm so called thin/small packages).

1’st Ram Up Rate	max3.0+/-2 /sec	-
Preheat	150 ~200	60~180 sec
2’nd Ram Up	max3.0+/-2 /sec	-
Solder Joint	217 above	60~150 sec
Peak Temp	260 +0/-5	20~40 sec
Ram Down rate	6 /sec max	-

Wave Soldering:

Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems.

Manual Soldering:

Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C.

Product Tags: n channel mosfet transistor high voltage transistor

Related Products

AP2602GY-HF FR4 board 2W 30A SOT-26 IC Voltage Regulator for sale


From:	Enter your Email please. Your email is incorrect!
To:	Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Subject:	Subject is empty!
Message:	Characters Remaining: (80/3000) Please enter 20 to 3000 characters to contact this supplier!

AP6H03S Mosfet Driver Using Transistor , Durable High Amp Transistor

AP6H03S Mosfet Driver Using Transistor , Durable High Amp Transistor

AP2602GY-HF FR4 board 2W 30A SOT-26 IC Voltage Regulator

LED Inductor 0.35W 2.5A Mosfet Power Transistor AP1332GEU-HF

Drive IC AP2308GEN SOT-23 0.69W 3.6A Mosfet Power Transistor

AP2N1K2EN1 IC Chips SOT-723 0.15W 800mA MOSFET Transistor

AP2322GN LOGIC ICS 0.833W 10A MOSFET Power Switch

AP1334GEU-HF 0.35W 8A Mosfet Power Transistor New Condition