121 - 130 of 214
logic mosfet switch
Selling leads
|
...MOSFETS General Description VDSS= V ID= 6.0 A 20 z RDS(on) < Ω@VGS = 4.5V 25 mz 20z RDS(on) < Ω@VGS = 2.5V 32 m 2532mm FEATURE z TrenchFET Power ...
2024-12-09 18:42:28
|
|
...-Channel Enhancement Mode MOSFET Description The 10G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The ...
2024-12-09 18:42:28
|
|
QM4803D N-Ch and P-Channel MOSFET Description The QM4803D is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , ...
2024-12-09 18:42:28
|
|
AOD482/AOI482 100V N-Channel MOSFET General Description The AOD482/AOI482 combines advanced trench MOSFET technology with a low resistance package to ...
2024-12-09 19:03:13
|
|
|
...MOSFETS General Description VDSS= V ID= 6.0 A 20 z RDS(on) < Ω@VGS = 4.5V 25 mz 20z RDS(on) < Ω@VGS = 2.5V 32 m 2532mm FEATURE z TrenchFET Power ...
2024-12-09 21:52:33
|
|
|
...-Channel Enhancement Mode MOSFET Description The 10G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The ...
2024-12-09 21:52:33
|
|
|
QM4803D N-Ch and P-Channel MOSFET Description The QM4803D is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , ...
2024-12-09 21:52:33
|
|
|
AOD482/AOI482 100V N-Channel MOSFET General Description The AOD482/AOI482 combines advanced trench MOSFET technology with a low resistance package to ...
2024-12-09 21:52:33
|
|
HXY4812 30V Dual N-Channel MOSFET General Description The HXY4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. ...
2024-12-09 18:42:28
|
|
...MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low ...
2024-12-09 18:42:28
|