20G04GD 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET
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Detailed Product Description
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20G04GD 40V N+P-Channel Enhancement Mode MOSFET
Description
The 20G04GD uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES N-CH VDS =-40V,ID =20A RDS(ON) < 25mΩ @ VGS=-10V P-CH VDS =-40V,ID =-18A RDS(ON) <-42mΩ @ VGS=-10V Application PWM applications Load switch Power management Package Marking and Ordering Information Absolute Maximum Ratings@T =25oC(unless otherwise specified)
N-CH Electrical Characteristics@ T =25oC(unless otherwise specified)
P-CH Electrical Characteristics@T =25oC(unless otherwise specified)
P-CH Electrical Characteristics@T =25oC(unless otherwise specified) |
| Product Tags: n channel mosfet transistor high voltage transistor |
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