China Mosfet Power Transistor manufacturer
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Shenzhen Hua Xuan Yang Electronics Co.,Ltd Our electronic components semiconductor is your most correct choice, because we are professional, honest, high quality, low price
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high voltage switching diode

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee
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high voltage switching diode

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...Switching Power Supplies Mosfet Power Transistor Description: The AP10N10D/Y uses advanced trench technology and design to provide excellent RDS(ON... 2024-12-09 21:52:33
BAV19W~BAV21W SWITCHINGDIODESOD-123 SOD-123Plastic-EncapsulateDiodes FEATURE Low Reverse Current Surface Mount Package Ideally Suited for Automatic ... 2024-12-09 21:52:33
...High Power Transistor , Custom Field Effect Transistor High Power Transistor DESCRIPTION The 30P06D uses advanced trench technology to provide ... 2024-12-09 18:45:55
...High Power Transistor , Custom Field Effect Transistor High Power Transistor DESCRIPTION The 30P06D uses advanced trench technology to provide ... 2024-12-09 21:52:33
QM4803D​ N-Ch and P-Channel MOSFET Description The QM4803D is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , ... 2024-12-09 18:42:28
...Voltage - 50 to 1000 Volts Forward Current -1.0 Ampere FEATURE The plastic package carries Underwriters Laboratory Flammability Classification 94V... 2024-12-09 18:42:28
QM4803D​ N-Ch and P-Channel MOSFET Description The QM4803D is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , ... 2024-12-09 21:52:33
...Voltage - 50 to 1000 Volts Forward Current -1.0 Ampere FEATURE The plastic package carries Underwriters Laboratory Flammability Classification 94V... 2024-12-09 21:52:33
WSF3012 N-Ch and P-Channel MOSFET Description The WSF3012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , ... 2024-12-09 18:42:28
... / High Frequency Mosfet Field Effect Transistor Feature 40V/250A R DS(ON) = m(typ.) @ V GS =10V 100% avalanche tested Reliableand Rugged Lead ... 2024-12-09 18:50:53
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