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high voltage switching diode
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( Electronic Components ) New AP2602GY-HF integrated circuits Description AP2602 series are from Advanced Power innovated design and silicon process ...
2024-12-09 21:52:33
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TO-92 Plastic-Encapsulate Transistors 3DD13001B TRANSISTOR (NPN) FEATURE Ÿ power switching applications MARKING 13003B=Device code Solid dot=Green ...
2024-12-09 21:52:33
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...High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (Ta=25℃ unless ...
2024-12-09 18:42:28
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...High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use MAXIMUM RATINGS (Ta=25℃ unless ...
2024-12-09 21:52:33
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BAV19W~BAV21W SWITCHINGDIODESOD-123 SOD-123Plastic-EncapsulateDiodes FEATURE Low Reverse Current Surface Mount Package Ideally Suited for Automatic ...
2024-12-09 18:42:28
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AOD442/AOI442 60V N-Channel MOSFET General Description The AOD442/AOI442 used advanced trench technology to provide excellent R DS(ON) and low gate ...
2024-12-09 19:03:13
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AOD442G 60V N-Channel MOSFET General Description The AOD444/AOI444 combine advanced trench MOSFET technology with a low resistance package to provide ...
2024-12-09 19:03:13
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...Switching Power Supplies Mosfet Power Transistor Description: The AP10N10D/Y uses advanced trench technology and design to provide excellent RDS(ON...
2024-12-09 19:11:03
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AOD442/AOI442 60V N-Channel MOSFET General Description The AOD442/AOI442 used advanced trench technology to provide excellent R DS(ON) and low gate ...
2024-12-09 21:52:33
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AOD442G 60V N-Channel MOSFET General Description The AOD444/AOI444 combine advanced trench MOSFET technology with a low resistance package to provide ...
2024-12-09 21:52:33
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