10A 100V Mosfet Power Transistor AP10N10DY For Switching Power Supplies

10A 100V Mosfet Power Transistor AP10N10DY For Switching Power Supplies

Mosfet Power Transistor Description:

The AP10N10D/Y uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.

Mosfet Power Transistor Features

VDS = 100V,ID = 10A
RDS(ON) <160mΩ @ VGS=10V (Typ:140mΩ)
RDS(ON) <170mΩ @ VGS=4.5V (Typ:160mΩ)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation

Mosfet Power Transistor Application

Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply

Package Marking and Ordering Information

Absolute Maximum Ratings (T A=25℃unless otherwise noted)

Electrical Characteristics (TA=25℃unless otherwise noted)

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

Attention

1, Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.

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