191 - 200 of 448
high power pnp transistor
Selling leads
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...10 V < VGS = RDS(on) < 136mΩ@VGS = 4.5V FEATURE High power and current handing capability Lead free product is acquired Surface mount package ...
2024-12-09 18:42:28
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...10 V < VGS = RDS(on) < 136mΩ@VGS = 4.5V FEATURE High power and current handing capability Lead free product is acquired Surface mount package ...
2024-12-09 21:52:33
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...high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The WST2078 ...
2024-12-09 18:42:28
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...high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The WST2078 ...
2024-12-09 21:52:33
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... ruggedness and suitable to use in Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity or Invertors Mosfet Power ...
2024-12-09 19:11:03
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... ruggedness and suitable to use in Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity or Invertors Mosfet Power ...
2024-12-09 21:52:33
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...Power MOSFET DESCRIPTION The HXY12N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used ...
2024-12-09 18:45:20
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Multi Functional Mosfet Power Switch / AP8810TS High Current Mosfet Switch General Description: Mos Field Effect Transistor are used in many power ...
2024-12-09 19:11:03
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...Power MOSFET DESCRIPTION The HXY12N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used ...
2024-12-09 21:52:33
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Multi Functional Mosfet Power Switch / AP8810TS High Current Mosfet Switch General Description: Mos Field Effect Transistor are used in many power ...
2024-12-09 21:52:33
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