China Mosfet Power Transistor manufacturer
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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Multi Functional Mosfet Power Switch / AP8810TS High Current Mosfet Switch

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee
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Multi Functional Mosfet Power Switch / AP8810TS High Current Mosfet Switch

Brand Name Hua Xuan Yang
Model Number AP8810TS
Certification RoHS、SGS
Place of Origin ShenZhen China
Minimum Order Quantity Negotiation
Price Negotiated
Payment Terms L/C T/T Western Union
Supply Ability 18,000,000PCS / Per Day
Delivery Time 1 - 2 Weeks
Packaging Details Boxed
Product name Mosfet Power Switch
Model AP8810TS
Pack TSSOP-8
Marking AP8810E XXX YYYY
VDSDrain-Source Voltage 20V
VGSGate-Sou rce Voltage ±12V
Detailed Product Description

Multi Functional Mosfet Power Switch / AP8810TS High Current Mosfet Switch

 

General Description:

 

Mos Field Effect Transistor are used in many power supply and general power applications, especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names.

 

General Features

 

VDS = 20V,ID = 7A
RDS(ON) < 28mΩ @ VGS=2.5V
RDS(ON) < 26mΩ @ VGS=3.1V
RDS(ON) < 22mΩ @ VGS=4V
RDS(ON) < 20mΩ @ VGS=4.5V
ESD Rating:2000V HBM

 

Application

 

Battery protection
Load switch Power management

 

Package Marking and Ordering Information

 

Product IDPackMarkingQty(PCS)
AP8810TSTSSOP-8AP8810E XXX YYYY5000

 

ABSOLUTE MAXIMUM RATINGS(TA=25unless otherwise noted)

 

 

ParameterSymbolLimitUnit
Drain-Source VoltageVDS20V
Gate-Source VoltageVGS±12V

 

Drain Current-Continuous@ Current-Pulsed (Note 1)

ID7A
IDM25A
Maximum Power DissipationPD1.5W
Operating Junction and Storage Temperature RangeT J ,T STG-55 To 150
Thermal Resistance,Junction-to-Ambient (Note 2)RθJA83℃/W
ParameterSymbolLimitUnit
Drain-Source VoltageVDS20V
Gate-Source VoltageVGS±12V

 

Drain Current-Continuous@ Current-Pulsed (Note 1)

ID7A
IDM25A
Maximum Power DissipationPD1.5W
Operating Junction and Storage Temperature RangeT J ,T STG-55 To 150
Thermal Resistance,Junction-to-Ambient (Note 2)RθJA83℃/W

 

ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)

 

ParameterSymbolConditionMinTypMaxUnit
Drain-Source Breakdown VoltageBV DSSV GS=0V ID=250 μA20  V
Zero Gate Voltage Drain CurrentIDSSV DS=20V,V GS=0V  1μA

 

Gate-Body Leakage Current

 

IGSS

V GS=±4.5V,V DS=0V  ±200nA
V GS=±10V,VDS=0V  ±10uA
Gate Threshold VoltageV GS(th)V DS=V GS,ID=250 μA0.60.751.2V

 

Drain-Source On-State Resistance

 

RDS(ON)

V GS=4.5V, ID=6.5A 1420m Ω
V GS=4V, ID=6A 1622m Ω
V GS=3.1V, ID=5.5A 1926m Ω
V GS=2.5V, ID=5.5A 2428m Ω
Forward TransconductancegFSV DS=10V,I D=6.5A 6.6 S
Input CapacitanceClss  650 PF
Output CapacitanceCoss 360 PF
Reverse Transfer CapacitanceCrss 154 PF
Turn-on Delay Timetd(on)  1122nS
Turn-on Rise Time

r

t

 1228nS
Turn-Off Delay Timetd(off) 3573nS
Turn-Off Fall Time

f

t

 3365nS
Total Gate ChargeQg

 

V DS=10V,I D=7A, V GS=4.5V

 1116nC
Gate-Source ChargeQgs 2.5 nC
Gate-Drain ChargeQgd 3.2 nC
Diode Forward Voltage (Note 3)V SDV GS=0V,IS=1.5A 0.841.2V
ParameterSymbolConditionMinTypMaxUnit
Drain-Source Breakdown VoltageBV DSSV GS=0V ID=250 μA20  V
Zero Gate Voltage Drain CurrentIDSSV DS=20V,V GS=0V  1μA

 

Gate-Body Leakage Current

 

IGSS

V GS=±4.5V,V DS=0V  ±200nA
V GS=±10V,VDS=0V  ±10uA
Gate Threshold VoltageV GS(th)V DS=V GS,ID=250 μA0.60.751.2V

 

Drain-Source On-State Resistance

 

RDS(ON)

V GS=4.5V, ID=6.5A 1420m Ω
V GS=4V, ID=6A 1622m Ω
V GS=3.1V, ID=5.5A 1926m Ω
V GS=2.5V, ID=5.5A 2428m Ω
Forward TransconductancegFSV DS=10V,I D=6.5A 6.6 S
Input CapacitanceClss  650 PF
Output CapacitanceCoss 360 PF
Reverse Transfer CapacitanceCrss 154 PF
Turn-on Delay Timetd(on)  1122nS
Turn-on Rise Time

r

t

 1228nS
Turn-Off Delay Timetd(off) 3573nS
Turn-Off Fall Time

f

t

 3365nS
Total Gate ChargeQg

 

V DS=10V,I D=7A, V GS=4.5V

 1116nC
Gate-Source ChargeQgs 2.5 nC
Gate-Drain ChargeQgd 3.2 nC
Diode Forward Voltage (Note 3)V SDV GS=0V,IS=1.5A 0.841.2V

 

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.

 

Attention

 

1, Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.

2, APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein.

3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.

4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design.

5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.

7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.

Product Tags: n channel mosfet transistor   high voltage transistor  
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