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high current transistor
Selling leads
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6N60 Z 6.2A 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such ...
2024-12-09 21:52:33
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General Description The AOD240 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching ...
2024-12-09 21:52:33
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WSF3012 N-Ch and P-Channel MOSFET Description The WSF3012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , ...
2024-12-09 18:42:28
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QM4803D N-Ch and P-Channel MOSFET Description The WSF6012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , ...
2024-12-09 18:42:28
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60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V ID (at VGS=10V) 8.5A RDS(ON) (at VGS=10V) < 24mΩ RDS(ON) (at VGS = 4.5V) < 30mΩ RDS(ON) (at VGS ...
2024-12-09 18:42:28
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HXY12N10 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HXY12N10 uses advanced trench technology and design to provide excellent RDS(ON) with ...
2024-12-09 18:45:20
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WSF3012 N-Ch and P-Channel MOSFET Description The WSF3012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , ...
2024-12-09 21:52:33
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QM4803D N-Ch and P-Channel MOSFET Description The WSF6012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , ...
2024-12-09 21:52:33
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HXY12N10 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HXY12N10 uses advanced trench technology and design to provide excellent RDS(ON) with ...
2024-12-09 21:52:33
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60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V ID (at VGS=10V) 8.5A RDS(ON) (at VGS=10V) < 24mΩ RDS(ON) (at VGS = 4.5V) < 30mΩ RDS(ON) (at VGS ...
2024-12-09 21:52:33
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