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high current mosfet switch

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee View Contact Details

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high current mosfet switch

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A94 PNP Tip Power Transistors Fast Switching Silicon Semiconductor Triode Type

TO-92 Plastic-Encapsulate Transistors A94 TRANSISTOR (PNP) FEATURE High Breakdown Voltage MARKING A94=Device code Solid dot=Green molding compound ... 2024-12-09 21:52:33

D965 NPN Transistor Circuit , NPN Power Transistor High Performance

TO-92 Plastic-Encapsulate Transistors D965 TRANSISTOR (NPN) FEATURE Ÿ Audio Amplifier Ÿ Flash Unit of Camera Ÿ Switching Circuit MARKING D965=Device ... 2024-12-09 21:52:33

3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage

TO-92 Plastic-Encapsulate Transistors 3DD13002B TRANSISTOR (NPN) FEATURE Power Switching Applications MARKING 13002B=Device code Solid dot=Green ... 2024-12-09 21:52:33

2N3904 Tip Series Transistors Surface Mount High Cell Density Storage Temperature -55-150

SOT-89-3L Plastic-Encapsulate Transistors 2N3904 TRANSISTOR (NPN). FEATURE Ÿ NPN silicon epitaxial planar transistor for switching and Amplifier ... 2024-12-09 21:52:33

2SA1015 High Power PNP Transistor Switch , Tip PNP Transistor Circuit

SOT-89-3L Plastic-Encapsulate Transistors 2SA1015 TRANSISTOR (PNP) FEATURE Ÿ Power dissipation MARKING A1015=Device code Solid dot=Green molding ... 2024-12-09 18:42:28

2SA1015 High Power PNP Transistor Switch , Tip PNP Transistor Circuit

SOT-89-3L Plastic-Encapsulate Transistors 2SA1015 TRANSISTOR (PNP) FEATURE Ÿ Power dissipation MARKING A1015=Device code Solid dot=Green molding ... 2024-12-09 21:52:33

HXY2308 N Channel Mos Field Effect Transistor SOT-23 Plastic Encapsulated

...10 V < VGS = RDS(on) < 136mΩ@VGS = 4.5V FEATURE  High power and current handing capability  Lead free product is acquired  Surface mount package ... 2024-12-09 18:42:28

HXY2308 N Channel Mos Field Effect Transistor SOT-23 Plastic Encapsulated

...10 V < VGS = RDS(on) < 136mΩ@VGS = 4.5V FEATURE  High power and current handing capability  Lead free product is acquired  Surface mount package ... 2024-12-09 21:52:33

Avalanche Rated Mos Field Effect Transistor Inverter Systems Power Management

... of power MOSFET is similar to the general MOSFET. The power MOSFETS are very special to handle the high level of powers. It shows the high ... 2024-12-09 18:50:53

Avalanche Rated Mos Field Effect Transistor Inverter Systems Power Management

... of power MOSFET is similar to the general MOSFET. The power MOSFETS are very special to handle the high level of powers. It shows the high ... 2024-12-09 21:52:33

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