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2SA1015 High Power PNP Transistor Switch , Tip PNP Transistor Circuit

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

Contact Person:
Mr.David Lee
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2SA1015 High Power PNP Transistor Switch , Tip PNP Transistor Circuit

Place of Origin ShenZhen China
Brand Name Hua Xuan Yang
Certification RoHS、SGS
Minimum Order Quantity 1000-2000 PCS
Price Negotiated
Packaging Details Boxed
Delivery Time 1 - 2 Weeks
Payment Terms L/C T/T Western Union
Supply Ability 18,000,000PCS / Per Day
Model Number 2SA1015
product name semiconductor triode type
Application mobile power supply/ led driver/motor control
Material Silicon
Emitter-Base Voltage 6V
Case Tape/Tray/Reel
VCBO -50v
Detailed Product Description

SOT-89-3L Plastic-Encapsulate Transistors 2SA1015 TRANSISTOR (PNP)

 

 

 

FEATURE

Ÿ Power dissipation

 

 

 

MARKING

A1015=Device code

Solid dot=Green molding compound device, if none,the normal device

Y=Rank of hFE, XXX=Code

 

 

ORDERING INFORMATION

Part NumberPackagePacking MethodPack Quantity
2SA1015TO-92Bulk10000
2SA1015-TATO-92Tape2000

 

MAXIMUM RATINGS (Ta=25Š unless otherwise noted)

 

SymbolPara meterValueUnit
VCBOCollector-Base Voltage-50V
VCEOCollector-Emitter Voltage-50V
VEBOEmitter-Base Voltage-5V
ICCollector Current -Continuous-150mA
PDCollector Power Dissipation400mW
R0 JAThermal Resist ance from Junction to Ambient312Š / W
TjJunction Temperature150Š
TstgSt orage Temperature-55 ~+150Š

 

 

Ta=25 Š unless otherwise specified

 

ParameterSymbolTest conditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC= -100µA, IE=0-50  V
Collector-emitter breakdown voltageV(BR)CEOIC= -0.1mA, IB=0-50  V
Emitter-base breakdown voltageV(BR)EBOIE= -100µA, IC=0-5  V
Collector cut-off currentICBOVCB= -50V,IE=0  -0.1µA
Collector cut-off currentICEOVCE= -50V, IB=0  -0.1µA
Emitter cut-off currentIEBOVEB= -5V, IC=0  -0.1µA
DC current gainhFEVCE= -6V, IC= -2mA70 700 
Collector-emitter saturation voltageVCE(sat)IC= -100mA, IB= -10mA  -0.3V
Base-emitter saturation voltageVBE(sat)IC= -100mA, IB= -10mA  -1.1V
Transition frequencyfTVCE= -10 V, IC= -1mA f =30MHz80  MHz
Collector output capacitanceCobVCB=-10V,IE=0,f=1MHz  7pF
Noise figureNFVCE= -6 V, IC= -0.1mA, f =1kHz,RG=10kK  6dB

 

 

CLASSIFICATION OF hFE1

RankOYGRBL
Range70-140120-240200-400350-700

 
 
Typical Characteristics
 


 
 

 Package Outline Dimensions
 

SymbolDimensions In MillimetersDimensions In Inches
 MinMaxMinMax
A3.3003.7000.1300.146
A11.1001.4000.0430.055
b0.3800.5500.0150.022
c0.3600.5100.0140.020
D4.3004.7000.1690.185
D13.430 0.135 
E4.3004.7000.1690.185
e1.270 TYP0.050 TYP
e12.4402.6400.0960.104
L14.10014.5000.5550.571
0 1.600 0.063
h0.0000.3800.0000.015

 

 
 
 SOT-89-3L Suggested Pad Layout
 


TO-92 Suggested Pad Layout

 

 

 


TO-92 7DSH DQG 5HHO

 

Product Tags: tip pnp transistor   high power pnp transistor  
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