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mos field effect transistor
Selling leads
60V N-Channel AlphaSGT HXY4266 Product Summary VDSS= V ID= 3.6 A 30 z RDS(on) < mΩ@VGS = 10 V 65 z RDS(on) < mΩ@VGS = 4.5V 78 FEATURE TrenchFET Power ...
2024-12-09 21:52:33
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SOT-23 Plastic-Encapsulate MOSFETS HXY2302Z N-Channel 20-V(D-S) MOSFET Product Summary RDS(on)<60mΩ@VGS=4.5V RDS(on)<73mΩ@VGS=2.5V ID=2.3A VDSS=20V ...
2024-12-09 21:52:33
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SOT-23 Plastic-Encapsulate MOSFETS HXY2300 Product Summary VDSS= RDS(on) V ID= 32 mΩ@ 4.5V 5.0 A < VGS = z RDS(on) < mΩ@VGS = 2.5V 40 z z 20 40 z RDS...
2024-12-09 21:52:33
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60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V I = 10A VGS = 10V) RDS(ON) < 23mΩ (VGS = 10V) RDS(ON) < 35mΩ (VGS = 4.5V) General Description ...
2024-12-09 21:52:33
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60V N-Channel AlphaSGT HXY4264 Product Summary VDS (V) = 30V I = 18A D RDS(ON) < 11m Ω (VGS = 10V) RDS(ON) < 19m Ω (VGS = 4.5V) General Description ...
2024-12-09 21:52:33
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60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V ID (at VGS=10V) 13A RDS(ON) (at VGS=10V) < 11.5mΩ RDS(ON) (at VGS = 4.5V) < 15.5mΩ General ...
2024-12-09 21:52:33
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60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V ID (at VGS=10V) 8.5A RDS(ON) (at VGS=10V) < 24mΩ RDS(ON) (at VGS = 4.5V) < 30mΩ RDS(ON) (at VGS ...
2024-12-09 21:52:33
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60V N-Channel AlphaSGT HXY4266 Product Summary VDS 60V ID (at VGS=10V) 11A RDS(ON) (at VGS=10V) < 13.5mΩ RDS(ON) (at VGS=4.5V) < 18mΩ General ...
2024-12-09 21:52:33
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60V N-Channel AlphaSGT HXY4264 Product Summary VDS 60V ID (at VGS=10V) 13.5A RDS(ON) (at VGS=10V) < 9.8mΩ RDS(ON) (at VGS=4.5V) < 13.5mΩ General ...
2024-12-09 21:52:33
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Custom Made Mos Field Effect Transistor With Low On State Resistance Mos Field Effect Transistor Feature -60V/-40A R DS(ON) = 19mΩ(typ.)@V GS = -10V R ...
2024-12-09 21:52:33
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