China Mosfet Power Transistor manufacturer
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Shenzhen Hua Xuan Yang Electronics Co.,Ltd Our electronic components semiconductor is your most correct choice, because we are professional, honest, high quality, low price
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mos field effect transistor

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

City: shenzhen

Province/State:guangdong

Country/Region:china

Tel:+86--13417075252

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Mr.David Lee
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mos field effect transistor

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60V N-Channel AlphaSGT HXY4266 Product Summary VDSS= V ID= 3.6 A 30 z RDS(on) < mΩ@VGS = 10 V 65 z RDS(on) < mΩ@VGS = 4.5V 78 FEATURE TrenchFET Power ... 2024-12-09 21:52:33
SOT-23 Plastic-Encapsulate MOSFETS HXY2302Z N-Channel 20-V(D-S) MOSFET Product Summary RDS(on)<60mΩ@VGS=4.5V RDS(on)<73mΩ@VGS=2.5V ID=2.3A VDSS=20V ... 2024-12-09 21:52:33
SOT-23 Plastic-Encapsulate MOSFETS HXY2300 Product Summary VDSS= RDS(on) V ID= 32 mΩ@ 4.5V 5.0 A < VGS = z RDS(on) < mΩ@VGS = 2.5V 40 z z 20 40 z RDS... 2024-12-09 21:52:33
60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V I = 10A VGS = 10V) RDS(ON) < 23mΩ (VGS = 10V) RDS(ON) < 35mΩ (VGS = 4.5V) General Description ... 2024-12-09 21:52:33
60V N-Channel AlphaSGT HXY4264 Product Summary VDS (V) = 30V I = 18A D RDS(ON) < 11m Ω (VGS = 10V) RDS(ON) < 19m Ω (VGS = 4.5V) General Description ... 2024-12-09 21:52:33
60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V ID (at VGS=10V) 13A RDS(ON) (at VGS=10V) < 11.5mΩ RDS(ON) (at VGS = 4.5V) < 15.5mΩ General ... 2024-12-09 21:52:33
60V N-Channel AlphaSGT HXY4264 Product Summary VDS 30V ID (at VGS=10V) 8.5A RDS(ON) (at VGS=10V) < 24mΩ RDS(ON) (at VGS = 4.5V) < 30mΩ RDS(ON) (at VGS ... 2024-12-09 21:52:33
60V N-Channel AlphaSGT HXY4266 Product Summary VDS 60V ID (at VGS=10V) 11A RDS(ON) (at VGS=10V) < 13.5mΩ RDS(ON) (at VGS=4.5V) < 18mΩ General ... 2024-12-09 21:52:33
60V N-Channel AlphaSGT HXY4264 Product Summary VDS 60V ID (at VGS=10V) 13.5A RDS(ON) (at VGS=10V) < 9.8mΩ RDS(ON) (at VGS=4.5V) < 13.5mΩ General ... 2024-12-09 21:52:33
Custom Made Mos Field Effect Transistor With Low On State Resistance Mos Field Effect Transistor Feature -60V/-40A R DS(ON) = 19mΩ(typ.)@V GS = -10V R ... 2024-12-09 21:52:33
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