China Sapphire Substrate manufacturer
SHANGHAI FAMOUS TRADE CO.,LTD
SHANGHAI FAMOUS TRADE CO.,LTD
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dummy prime semiconductor substrate

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SHANGHAI FAMOUS TRADE CO.,LTD

City: shanghai

Province/State:shanghai

Country/Region:china

Tel:86--15801942596

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dummy prime semiconductor substrate

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2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe + growth (modified VFG method) is used to pull a single ... 2025-05-06 20:44:37
...substrates wafers/4 inch 4h-N type SIC Substrates 0.35 mm DSP Prime Zero Grade Silicon Carbide Wafer About Silicon Carbide (SiC)Crystal Silicon ... 2025-07-30 00:08:00
...Semiconductor Substrate For Epitaxial Growth VGF 2inch 4inch 6inch n-type prime grade GaAs wafer for epitaxial growth Gallium arsenide can be made ... 2025-05-06 20:45:00
...thickness 500±25um n doped dummy prime research grade 8inch 12inch 4H-N type SiC Wafer's abstract This study presents the characterization of an 8... 2025-05-06 20:41:22
...prime grade GaAs wafer for epitaxial growth GaAs wafer (Gallium Arsenide) is an advantageous alternative to silicon that has been evolving in the ... 2025-05-06 20:44:45
... Substrate Indium Arsenide InAs wafer Application Indium Arsenide (InAs) single crystal semiconductor substrates are materials with unique ... 2025-07-30 00:08:00
... Grade About Silicon Carbide (SiC)Crystal Silicon carbide (SiC), also known as carborundum, is a semiconductor containing silicon and carbon with ... 2025-05-06 20:40:56
... GaAs Wafer Product Description (GaAs) Gallium Arsenide Wafers PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide ... 2025-05-06 20:44:31
2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe + growth (modified VFG method) is used to pull a single ... 2025-05-06 20:44:36
...substrate, and an infrared light-emitting device with a wavelength of 2 to 14 μm can be fabricated. The AlGaSb superlattice structure material can ... 2025-05-06 20:44:36
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