31 - 40 of 88
600ma silicon power transistor
Selling leads
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20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and ...
2024-12-09 20:24:57
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General Description The AOD240 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching ...
2024-12-09 20:35:29
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General Description The AOD240 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching ...
2024-12-09 21:36:46
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20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and ...
2024-12-09 21:36:46
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HXY4812 0V Dual N-Channel MOSFET General Description The HXY4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. ...
2024-12-09 20:24:57
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HXY4812 30V Dual N-Channel MOSFET General Description The HXY4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. ...
2024-12-09 20:24:57
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HXY4812 0V Dual N-Channel MOSFET General Description The HXY4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. ...
2024-12-09 21:36:46
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HXY4812 30V Dual N-Channel MOSFET General Description The HXY4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. ...
2024-12-09 21:36:46
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..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect ...
2024-12-09 20:35:29
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..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect ...
2024-12-09 21:36:46
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