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600ma silicon power transistor
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... voltage: 65 V Rds On-Drain Source On Resistance: 760 mOhms Operating frequency: 1 GHz Gain: 16.5 dB Output power: 18 W Minimum operating ...
2024-12-09 20:43:57
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... voltage: 65 V Rds On-Drain Source On Resistance: 760 mOhms Operating frequency: 1 GHz Gain: 16.5 dB Output power: 18 W Minimum operating ...
2024-12-09 21:36:46
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HXY9926A 20V Dual N-Channel MOSFET General Description The HXY9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and ...
2024-12-09 20:24:57
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HXY9926A 20V Dual N-Channel MOSFET General Description The HXY9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and ...
2024-12-09 21:36:46
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... Field Effect (RF MOSFET) Transistors Transistor Polarity: N-Channel Technology: Si Id-Continuous Drain Current: 4 A Vds-drain-source breakdown ...
2024-12-09 20:43:57
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... Field Effect (RF MOSFET) Transistors Transistor Polarity: N-Channel Technology: Si Id-Continuous Drain Current: 4 A Vds-drain-source breakdown ...
2024-12-09 21:36:46
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...carrier conduction Guard ring for overvoltage protection Low power loss ,high efficiency High current capability ,low forward voltage drop High ...
2024-12-09 20:35:29
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...carrier conduction Guard ring for overvoltage protection Low power loss ,high efficiency High current capability ,low forward voltage drop High ...
2024-12-09 21:36:46
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10A 200V Schottky Barrier Diode HBR10200 TO-220 TO-220HF TO-263 TO-DPAKM APPLICATIONS High frequency switch power supply Free wheeling diodes, ...
2024-12-09 20:35:29
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10A 150V Schottky Barrier Diode HBR10150 TO-220 TO-220HF TO-22OMF APPLICATIONS High frequency switch power supply Free wheeling diodes, polarity ...
2024-12-09 20:35:29
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