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Beijing Silk Road Enterprise Management Services Co.,LTD
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600ma silicon power transistor

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600ma silicon power transistor

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High Voltage Switching Mosfet Power Transistor With High Thermal Resistance General Description The AOD407 uses advanced trench technology to provide ... 2024-12-09 20:35:29
High Voltage Switching Mosfet Power Transistor With High Thermal Resistance General Description The AOD407 uses advanced trench technology to provide ... 2024-12-09 21:36:46
..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to ... 2024-12-09 20:24:57
..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to ... 2024-12-09 21:36:46
TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN) FEATURE Power Dissipation MARKING D882=Device code Solid dot = Green molding compound ... 2024-12-09 20:24:57
TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN) FEATURE Power Dissipation MARKING D882=Device code Solid dot = Green molding compound ... 2024-12-09 21:36:46
TO-263-3L Plastic-Encapsulate Transistors 3DD13005 TRANSISTOR (NPN) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 Š unless otherwise ... 2024-12-09 20:24:57
TO-263-3L Plastic-Encapsulate Transistors 3DD13005 TRANSISTOR (NPN) FEATURE Power Switching Applications MAXIMUM RATINGS (Ta =25 Š unless otherwise ... 2024-12-09 21:36:46
8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V ... 2024-12-09 20:24:57
8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V ... 2024-12-09 21:36:46
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