8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge
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Detailed Product Description
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20V N+N-Channel Enhancement Mode MOSFET
DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS(ON) < 20mΩ @ VGS=4.5V ESD Rating:2000V HBM
Application Battery protection Load switch Power management
Package Marking and Ordering Information
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
NOTES: 1. Repetitive Rating: Pulse width limited by maximum
junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed
by design, not subject to production testing. TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS |
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| Product Tags: Dual N Channel Mosfet Power Transistor Mosfet Power Transistor 20V Mosfet Power Transistor Low Gate Charge |
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