471 - 478 of 478
silicon carbide power modules 1200v
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Surface Mount SCTH35N65G2V-7 Single N-Channel 650V 45A 208W Transistors Product Description Of SCTH35N65G2V-7 SCTH35N65G2V-7 is Automotive-grade ...
2025-07-14 00:20:06
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...Chip TO-247-2 SiC Schottky Product Description Of MSC030SDA330B MSC030SDA330B The silicon carbide (SiC) power Schottky barrier diode (SBD) , the ...
2025-07-15 00:21:23
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... Mount. The package is D²PAK-2 (TO-263-2). Specification Of FFSB0665B-F085 Part Number: FFSB0665B-F085 Reverse Recovery Time (Trr): 0 Ns Power ...
2025-07-15 00:21:21
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... MSC180SMA120S is a 1200 V, 180 mΩ Silicon Carbide N-Channel Power MOSFET in a TO-268 (D3PAK) package. Specification Of MSC180SMA120S Part Number ...
2025-07-14 00:20:07
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... FETs MOSFETs Transistors TO-268-3 Product Description Of MSC017SMA120S MSC017SMA120S is a 1200 V, 17 mΩ Silicon Carbide N-Channel Power MOSFET in ...
2025-07-14 00:20:07
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... MSC090SMA070S is N-Channel Power MOSFET Transistors, Fast switching speed due to low internal gate resistance (ESR). Specification Of MSC090SMA070...
2025-07-15 00:21:29
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...pin SMD package based on silicon carbide trench technology for high power applications. Specification Of IMBG65R030M1HXTMA1 Part Number IMBG65R030M...
2025-07-15 00:21:29
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...,S1Q is Silicon Carbide N-Channel MOS Transistors, Through Hole TO-3P(N). Specification Of TW070J120B,S1Q Part Number TW070J120B,S1Q Vgs (Max) ±25V...
2025-07-14 00:20:06
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