451 - 460 of 478
silicon carbide power modules 1200v
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ADRF5162BCPZN Wireless Communication Module High Power 100W Silicon SPDT Reflective Switch [MJD Advantage] + 15 years experience for electronic ...
2025-07-02 00:18:49
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... solid silicon carbide technology. Specification Of IMZA65R027M1H Part Number IMZA65R027M1H Power Dissipation (Max) 189W (Tc) Operating Temperature ...
2025-07-15 00:21:31
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... IMW65R030M1H N-Channel SiC Trench Power Transistors TO-247-3 Product Description Of IMW65R030M1H IMW65R030M1H is 650V CoolSiC M1 SiC Trench Power ...
2025-07-14 00:20:07
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.... Specification Of IMW65R027M1H Part Number IMW65R027M1H Technology SiCFET (Silicon Carbide) Drive Voltage (Max Rds On, Min Rds On) 18V Rds On (Max...
2025-07-15 00:21:30
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N-Channel Power MOSFET Transistors MSC017SMA120B4 TO-247-4 Integrated Circuit Chip Product Description Of MSC017SMA120B4 MSC017SMA120B4 is a 1200 V, ...
2025-07-15 00:21:12
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1700V N-Channel Power MOSFET MSC750SMA170S Integrated Circuit Chip TO-268-3 Product Description Of MSC750SMA170S MSC750SMA170S is a 1700 V, 750 mΩ ...
2025-07-14 00:20:07
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...Power MOSFET Transistors TO-263-8 Product Description Of IMBG65R163M1HXTMA1 IMBG65R163M1HXTMA1 SMD Compact Package SiC MOSFET, CoolSiC™ MOSFET ...
2025-07-15 00:21:04
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...power MOSFET TO-263-8 Integrated Circuit Chip Product Description Of SCT4045DW7HRTL SCT4045DW7HRTL is 750V 31A(Tc) 93W Automotive Grade N-channel ...
2025-07-14 00:20:06
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.... The EDT2 IGBT was optimized for applications with switching frequencies in the range of 10 kHz. Specification Of FS820R08A6P2 Part Number ...
2025-07-15 00:20:33
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... MOSFET Transistors. Specification Of IMZ120R090M1H Part Number IMZ120R090M1H Product Status Active FET Type N-Channel Technology SiCFET (Silicon ...
2025-07-14 00:20:03
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