421 - 430 of 478
silicon carbide power modules 1200v
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Medium Power Econo FF900R12ME7WB11BPSA1 1200V 900A dual three-phase PIM IGBT modules Detailed Description FF900R12ME7WB11BPSA1 is 1200 V, 900 A dual ...
2025-07-14 00:20:16
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...Modules FF600R12ME4WB73BPSA1 600A Transistors IGBT Modules Product Description Of FF600R12ME4WB73BPSA1 FF600R12ME4WB73BPSA1 is EconoPIM™ 2 1200V, ...
2025-07-15 00:20:33
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...Modules Product Description Of FS150R12N2T7BPSA2 FFS150R12N2T7BPSA2 1200V 3-level IGBT Modules are EasyPACK™ modules with Trench/Fieldstop ...
2025-07-15 00:20:33
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NXH35C120L2C2S1G Silicon IGBT Module Inverter Three Phase 26-DIP Automotive IGBT Modules NXH35C120L2C2S1G IGBT Module 26-DIP Three Phase Inverter ...
2024-12-09 22:24:04
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...) of +80°C. Offering higher power density and a compact form factor, the SP4 package enables a lower quantity of modules in parallel to achieve ...
2024-12-09 22:12:14
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...Auto SPM module providing a fully−featured high−performance auxiliary inverter output stage for hybrid and electric vehicles. Specification Of ...
2024-12-09 22:24:04
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...,and higher thermal conductivity compared to Silicon-only devices. Specification Of MSC080SMA120 Part Number MSC080SMA120 Qg - Gate Charge: 64 nC ...
2025-07-14 00:19:57
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...Modules 3 Phase Inverter NXH350N100H4Q2F2P1G 3-Phase Inverter NXH350N100H4Q2F2P1G 1kV High Denity IGBT Silicon Modules Product Description Of ...
2024-12-09 22:24:04
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Automotive IGBT Modules IFS100B12N3E4PB11 Low Power IGBT Modules 1.2kV 6-Pack IGBT Silicon Modules [MJD Advantage] + 15 years experience for ...
2025-06-27 14:11:48
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... Power MOSFET, High speed switching performances, package is H2PAK-7. Specification Of SCT040H120G3AG Part Number: SCT040H120G3AG Gate Threshold ...
2025-07-15 00:21:25
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