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silicon carbide power modules 1200v
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... is TO-247-4, Through Hole. Specification Of IMZ120R140M1H Part Number IMZ120R140M1H FET Type N-Channel Technology SiCFET (Silicon Carbide) Drain ...
2025-07-15 00:21:31
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... Hole. Specification Of TW030N120C,S1F Part Number: TW030N120C,S1F Technology: SiCFET (Silicon Carbide) Input Capacitance: 2925pF Gate Threshold ...
2025-07-14 00:20:06
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... Single FETs Transistors, 160 mohm, 1200V, M1, Package is TO-247-3L. Specification Of NTHL160N120SC1 Part Number NTHL160N120SC1 Input Capacitance ...
2025-07-15 00:21:31
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... is 1200V 20A(Tc) 107W(Tc) N-Channel Silicon Carbide Transistors, package is TO-247-3, Through Hole. Specification Of TW140N120C,S1F Part Number ...
2025-07-14 00:20:06
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... including Silicon Carbide, voltage and current ratings, and packages. Unique requirements can be met with application-specific power modules (ASPM...
2025-07-14 00:20:07
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... silicon carbide Power MOSFET Transistors, 900V, 12mOhm typ., 110A in an H2PAK-7 package. Specification Of SCT012H90G3AG Part Number: SCT012H90G3AG ...
2025-07-15 00:21:25
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... Description Of SCTW35N65G2V SCTW35N65G2V silicon carbide Power MOSFET device has been developed using advanced and innovative 2nd generation SiC ...
2025-07-14 00:20:06
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...400W Through Hole TO-247-3 Product Description Of MSC015SMA070 The MSC015SMA070 silicon carbide (SiC) power MOSFET product line increases the ...
2025-07-14 00:19:57
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... SiC MOSFETs H²PAK-7 Wide Bandgap Transistors Product Description Of SCT040H65G3AG SCT040H65G3AG Automotive-grade silicon carbide Power MOSFET 650 ...
2025-07-15 00:21:25
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... SCTW35N65G2VAG N-Channel Transistors Through Hole Product Description Of SCTW35N65G2VAG SCTW35N65G2VAG is Automotive-grade silicon carbide Power ...
2025-07-14 00:20:06
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