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silicon carbide power modules 1200v
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Automotive IGBT Modules NXH006P120M3F2PTHG 1200V Half−Bridge Silicon Carbide Module [MJD Advantage] + 15 years experience for electronic components + ...
2024-12-10 00:17:44
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Automotive IGBT Modules NXH011F120M3F2PTHG 1200V Full−Bridge Silicon Carbide Module [MJD Advantage] + 15 years experience for electronic components + ...
2024-12-10 00:17:44
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FF8MR12W1M1HB70 Automotive IGBT Modules 1200V 8mΩ Silicon Carbide CoolSiC™ MOSFET Half Bridge Module
FF8MR12W1M1HB70 Automotive IGBT Modules 1200V 8mΩ Silicon Carbide CoolSiC™ MOSFET Half Bridge Module [MJD Advantage] + 15 years experience for ...
2025-04-29 03:33:43
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FF8MR12W1M1HS4PB11 Automotive IGBT Modules 1200V Silicon Carbide MOSFET Half Bridge Module [MJD Advantage] + 15 years experience for electronic ...
2025-04-29 03:33:42
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CAB004M12GM4 Automotive IGBT Modules 1200V 4mΩ Silicon Carbide Half-Bridge Module [MJD Advantage] + 15 years experience for electronic components + ...
2025-07-14 00:20:16
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HAS530M12BM3 Automotive IGBT Modules 1200V 530A Silicon Carbide Half-Bridge Module [MJD Advantage] + 15 years experience for electronic components + ...
2025-07-14 00:20:16
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HAS350M12BM3 Automotive IGBT Modules 1200V 350A Silicon Carbide Half-Bridge Module [MJD Advantage] + 15 years experience for electronic components + ...
2025-07-14 00:20:16
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Automotive IGBT Modules NXH040P120MNF1PTG Mosfet Array 1200V Silicon Carbide Transistors [MJD Advantage] + 15 years experience for electronic ...
2025-02-10 14:23:18
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..., Through Hole, Package is TO-247. Specification Of MSC015SDA120B Part Number: MSC015SDA120B Maximum Working Peak Reverse Voltage: 1200V Maximum DC ...
2025-07-14 00:19:42
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... 21 nC @ 18 V Vgs (Max) +23V, -7V Input Capacitance (Ciss) (Max) @ Vds 707 pF @ 800 V Power Dissipation (Max) 115W (Tc) Operating Temperature -55°C ...
2025-07-14 00:20:08
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