101 - 110 of 478
silicon carbide power modules 1200v
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...Module 1200V Automotive IGBT Modules Product Description Of FF8MR12W2M1B11BOMA1 FF8MR12W2M1B11BOMA1 is 1200 V, 8 mΩ half-bridge module with ...
2025-07-14 00:19:17
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... Modules 1200V 150A Half-Bridge IGBT Power Module Product Description Of BSM150GB120DN2 BSM150GB120DN2 is 1200V, 210A Half Bridge IGBT Module, ...
2025-01-10 07:30:17
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... performance compared to a silicon-based solution increasing system reliability and the possibility to increase output power in a given form factor...
2025-07-14 00:19:43
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... Dual Silicon Carbide Schottky Barrier Diodes 1200V Product Description Of MSC2X50SDA120J MSC2X50SDA120J is Silicon Carbide (SiC) power Schottky ...
2025-07-14 00:20:06
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... performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low ...
2025-07-14 00:19:34
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1200V Diode MSC050SDA120B Zero Recovery Silicon Carbide Schottky Diode TO-247-3 Product Description Of MSC050SDA120B MSC050SDA120B is Zero Recovery ...
2025-07-14 00:19:57
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N-Channel IMBG120R220M1H 1200V Silicon Carbide Trench TO-263-8 MOSFET Transistors Product Description Of IMBG120R220M1H IMBG120R220M1H is N-Channel ...
2025-07-14 00:19:46
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Silicon Carbide DF23MR12W1M1PB11BPSA1 Automotive IGBT Modules 20mW 2N-Channel Product Description Of DF23MR12W1M1PB11BPSA1 DF23MR12W1M1PB11BPSA1 is ...
2025-07-14 00:19:17
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...Silicon Carbide MSCSM70DUM07T3AG MOSFET Power Module 988W Product Description Of MSCSM70DUM07T3AG MSCSM70DUM07T3AG is 700V/353A dual common ...
2024-12-09 22:12:14
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... Of MSC360SMA120B Part Number: MSC360SMA120B Drain Source Voltage: 1200V Continuous Drain Current At TC = 25 °C: 11A Continuous Drain Current At TC ...
2025-07-14 00:20:07
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